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BAP51-03 データシート(PDF) 4 Page - NXP Semiconductors |
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BAP51-03 データシート(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 2004 Feb 11 4 NXP Semiconductors Product specification General purpose PIN diode BAP51-03 GRAPHICAL DATA Fig.2 Forward resistance as a function of forward current; typical values. Tj =25 C; f = 100 MHz. handbook, halfpage MGS322 10 2 5 1 10−1 110 IF (mA) r D ( Ω) Fig.3 Diode capacitance as a function of reverse voltage; typical values. Tj =25 C; f = 1 MHz. handbook, halfpage 020 VR (V) Cd (fF) 500 0 100 MGS323 200 300 400 4 8 12 16 handbook, halfpage 0.5 3 0 −2.5 −2 MGS659 −1.5 −1 −0.5 1 1.5 2 2.5 f (GHz) |S21| 2 (dB) (2) (3) (1) Fig.4 Insertion loss ( S 21 2) of the diode as a function of frequency; typical values. Diode inserted in series with a 50 stripline circuit and biased via the analyzer Tee network. Tamb =25 C. (1) IF =10 mA. (2) IF =1 mA. (3) IF =0.5 mA. handbook, halfpage 0.5 3 0 −25 −20 MGS660 −15 −10 −5 1 1.5 2 2.5 f (GHz) |S21| 2 (dB) Fig.5 Isolation ( S 21 2) of the diode as a function of frequency; typical values. Diode zero biased and inserted in series with a 50 stripline circuit. Tamb =25 C. |
同様の部品番号 - BAP51-03_15 |
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同様の説明 - BAP51-03_15 |
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