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IRL2910SPBF データシート(PDF) 2 Page - International Rectifier |
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IRL2910SPBF データシート(HTML) 2 Page - International Rectifier |
2 / 11 page IRL2910S/LPbF Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.026 VGS = 10V, ID = 29A ––– ––– 0.030 Ω VGS = 5.0V, ID = 29A ––– ––– 0.040 VGS = 4.0V, ID = 24A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 28 ––– ––– S VDS = 50V, ID = 29A ––– ––– 25 VDS = 100V, VGS = 0V ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V Qg Total Gate Charge ––– ––– 140 ID = 29A Qgs Gate-to-Source Charge ––– ––– 20 nC VDS = 80V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 81 VGS = 5.0V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 11 ––– VDD = 50V tr Rise Time ––– 100 ––– ID = 29A td(off) Turn-Off Delay Time ––– 49 ––– RG = 1.4Ω, VGS = 5.0V tf Fall Time ––– 55 ––– RD = 1.7Ω, See Fig. 10
Between lead, ––– ––– and center of die contact Ciss Input Capacitance ––– 3700 ––– VGS = 0V Coss Output Capacitance ––– 630 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 330 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current RDS(on) Static Drain-to-Source On-Resistance LS Internal Source Inductance 7.5 ns nH µA Source-Drain Ratings and Characteristics Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Notes: Pulse width ≤ 300µs; duty cycle ≤ 2%. VDD = 25V, starting TJ = 25°C, L = 1.2mH RG = 25Ω, IAS = 29A. (See Figure 12) ISD ≤ 29A, di/dt ≤ 490A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Uses IRL2910 data and test conditions ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode)
––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 29A, VGS = 0V trr Reverse Recovery Time ––– 240 350 ns TJ = 25°C, IF = 29A Qrr Reverse RecoveryCharge ––– 1.8 2.7 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) S D G 55 190 A |
同様の部品番号 - IRL2910SPBF_15 |
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同様の説明 - IRL2910SPBF_15 |
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