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IRLH5034PBF データシート(PDF) 6 Page - International Rectifier |
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IRLH5034PBF データシート(HTML) 6 Page - International Rectifier |
6 / 9 page IRLH5034PbF 6 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 20, 2015 Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Fig 18a. Gate Charge Test Circuit Fig 18b. Gate Charge Waveform Vds Vgs Id Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 16b. Unclamped Inductive Waveforms Fig 16a. Unclamped Inductive Test Circuit tp V(BR)DSS IAS RG IAS 0.01 Ω tp D.U.T L VDS + - VDD DRIVER A 15V 20V Fig 17a. Switching Time Test Circuit Fig 17b. Switching Time Waveforms V GS V DS 90% 10% t d(on) t d(off) t r t f VDS Pulse Width ≤ 1 µs Duty Factor≤ 0.1 RD VGS RG D.U.T. 10V + -VDD VGS CircuitLayoutConsiderations • Low Stray Inductance • Ground Plane • LowLeakageInductance Current Transformer P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period * VGS = 5V for Logic Level Devices * + - + + + - - - RG VDD • dv/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test D.U.T 1K VCC DUT 0 L s$$Ã |
同様の部品番号 - IRLH5034PBF_15 |
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同様の説明 - IRLH5034PBF_15 |
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