IRLML0030PBF_15 datasheet(1/10 Pages) IRF

部品番号	IRLML0030PBF

部品情報	ADVANCED PROCESS TECHNOLOGY

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メーカー	IRF [International Rectifier]

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02/29/12

IRLML0030TRPbF

HEXFET® Power MOSFET

www.irf.com

1

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

Notes

through are on page 10

Application(s)

Micro3TM (SOT-23)

IRLML0030TRPbF

D

S

G

3

1

2

• Load/ System Switch

Features and Benefits

Features

Benefits

VDS

30

V

VGS Max

± 20

V

RDS(on) max

(@VGS = 10V)

27

m

Ω

RDS(on) max

(@VGS = 4.5V)

40

m

Ω

Low RDS(on) ( ≤ 27mΩ)

Lower switching losses

Industry-standard pinout

Multi-vendor compatibility

Compatible with existing Surface Mount Techniques

results in Easier manufacturing

RoHS compliant containing no lead, no bromide and no halogen

⇒

Environmentally friendly

MSL1, Industrial qualification

Increased reliability

Absolute Maximum Ratings

Symbol

Parameter

Units

VDS

Drain-Source Voltage

V

ID @ TA = 25°C

Continuous Drain Current, VGS @ 10V

ID @ TA = 70°C

Continuous Drain Current, VGS @ 10V

IDM

Pulsed Drain Current

PD @TA = 25°C

Maximum Power Dissipation

PD @TA = 70°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

VGS

Gate-to-Source Voltage

V

TJ, TSTG

Junction and Storage Temperature Range

°C

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

RθJA

Junction-to-Ambient

e

–––

100

RθJA

Junction-to-Ambient (t<10s)

f

–––

99

Max.

5.3

4.3

-55 to + 150

± 20

0.01

30

1.3

0.8

21

W

°C/W

A

PD - 96278B

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