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IRLMS5703PBF データシート(PDF) 2 Page - International Rectifier |
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IRLMS5703PBF データシート(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRLMS5703PbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -30 V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.01 V/°C Reference to 25°C, ID = -1mA 0.180 VGS = -10V, ID = -1.6A 0.325 VGS = -4.5V, ID = -0.80A VGS(th) Gate Threshold Voltage -1.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 1.1 S VDS = -10V, ID = -0.80A -1.0 VDS = -24V, VGS = 0V -25 VDS = -24V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage 100 VGS = -20V Gate-to-Source Reverse Leakage -100 VGS = 20V Qg Total Gate Charge 7.2 11 ID = -1.6A Qgs Gate-to-Source Charge 1.4 2.1 nC VDS = -24V Qgd Gate-to-Drain ("Miller") Charge 2.3 3.4 VGS = -10V, See Fig. 6 and 9 td(on) Turn-On Delay Time 10 VDD = -15V tr Rise Time 12 ID = -1.6A td(off) Turn-Off Delay Time 20 RG = 6.2Ω tf Fall Time 8.4 RD = 9.2Ω, See Fig. 10 Ciss Input Capacitance 170 VGS = 0V Coss Output Capacitance 89 pF VDS = -25V Crss Reverse Transfer Capacitance 44 = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage -1.2 V TJ = 25°C, IS = -1.6A, VGS = 0V trr Reverse Recovery Time 29 44 ns TJ = 25°C, IF = -1.6A Qrr Reverse RecoveryCharge 27 41 nC di/dt = -100A/µs Source-Drain Ratings and Characteristics A -13 -1.7 S D G Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ -1.6A, di/dt ≤ -140A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: Pulse width ≤ 300µs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 5sec. |
同様の部品番号 - IRLMS5703PBF |
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同様の説明 - IRLMS5703PBF |
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