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データシートサーチシステム |
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データシートサーチシステム |
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IRF7NJZ44V データシート(PDF) 1 Page - International Rectifier |
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IRF7NJZ44V データシート(HTML) 1 Page - International Rectifier |
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1 / 7 page  Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25°C Continuous Drain Current 22* ID @ VGS = 10V, TC = 100°C Continuous Drain Current 22* IDM Pulsed Drain Current ➀ 88 PD @ TC = 25°C Max. Power Dissipation 50 W Linear Derating Factor 0.4 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ➁ 66 mJ IAR Avalanche Current ➀ 22 A EAR Repetitive Avalanche Energy ➀ 5.0 mJ dv/dt Peak Diode Recovery dv/dt ➂ 2.2 V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Package Mounting Surface Temp. 300 (for 5s) Weight 1.0 (Typical) g oC A 04/24/02 www.irf.com 1 Product Summary Part Number BVDSS RDS(on) ID IRF7NJZ44V 60V 0.0165 Ω 22A* For footnotes refer to the last page HEXFET® POWER MOSFET IRF7NJZ44V SURFACE MOUNT (SMD-0.5) 60V, N-CHANNEL Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, invert- ers, choppers, audio amplifiers and high-energy pulse circuits. Features: n Low RDS(on) n Avalanche Energy Ratings n Dynamic dv/dt Rating n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Light Weight SMD-0.5 * Current is limited by package and internal wires PD - 94433 |
同様の部品番号 - IRF7NJZ44V_15 |
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同様の説明 - IRF7NJZ44V_15 |
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