データシートサーチシステム |
|
IRF6641PBF データシート(PDF) 1 Page - International Rectifier |
|
IRF6641PBF データシート(HTML) 1 Page - International Rectifier |
1 / 10 page 1 www.irf.com © 2013 International Rectifier July 1, 2013 IRF6641TRPbF Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRF6641PbF DirectFET Medium Can Tape and Reel 4800 IRF6641TRPbF SQ SX ST SH MQ MX MT MN MZ Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. The IRF6641PbF device utilizes DirectFET® packaging technology. DirectFET® packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFET® package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications. Absolute Maximum Ratings Parameter Max. Units VGS Gate-to-Source Voltage ±20 V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 26 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 4.6 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.7 A IDM Pulsed Drain Current 37 EAS Single Pulse Avalanche Energy 46 mJ IAR Avalanche Current 11 A PD @TC = 25°C Power Dissipation 89 PD @TA = 25°C Power Dissipation 2.8 W PD @TA = 70°C Power Dissipation 1.8 Linear Derating Factor 0.022 W/°C TJ Operating Junction and -40 to + 150 °C TSTG Storage Temperature Range Applicable DirectFET Outline and Substrate Outline (see p.6, 7 for details) DIGITAL AUDIO MOSFET DirectFET® ISOMETRIC MZ VDS 200 V RDS(ON) typ. @ VGS = 10V 51 m Qg typ. 34 nC RG(int) typ. 1.0 Key Parameters Features Latest MOSFET silicon technology Key parameters optimized for Class-D audio amplifier applications Low RDS(on) for improved efficiency Low Qg for better THD and improved efficiency Low Qrr for better THD and lower EMI Low package stray inductance for reduced ringing and lower EMI Can deliver up to 400 W per channel into 8 load in half-bridge configuration amplifier Dual sided cooling compatible Compatible with existing surface mount technologies RoHS compliant, halogen-free Lead-free (qualified up to 260°C reflow) Notes through are on page 9 |
同様の部品番号 - IRF6641PBF |
|
同様の説明 - IRF6641PBF |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |