データシートサーチシステム
  Japanese  ▼
ALLDATASHEET.JP

X  

IRF6641PBF データシート(PDF) 1 Page - International Rectifier

部品番号 IRF6641PBF
部品情報  Latest MOSFET silicon technology
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
メーカー  IRF [International Rectifier]
ホームページ  http://www.irf.com
Logo IRF - International Rectifier

IRF6641PBF データシート(HTML) 1 Page - International Rectifier

  IRF6641PBF Datasheet HTML 1Page - International Rectifier IRF6641PBF Datasheet HTML 2Page - International Rectifier IRF6641PBF Datasheet HTML 3Page - International Rectifier IRF6641PBF Datasheet HTML 4Page - International Rectifier IRF6641PBF Datasheet HTML 5Page - International Rectifier IRF6641PBF Datasheet HTML 6Page - International Rectifier IRF6641PBF Datasheet HTML 7Page - International Rectifier IRF6641PBF Datasheet HTML 8Page - International Rectifier IRF6641PBF Datasheet HTML 9Page - International Rectifier Next Button
Zoom Inzoom in Zoom Outzoom out
 1 / 10 page
background image
1
www.irf.com
© 2013 International Rectifier
July 1, 2013
IRF6641TRPbF
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Quantity
IRF6641PbF
DirectFET Medium Can
Tape and Reel
4800
IRF6641TRPbF
SQ
SX
ST
SH
MQ
MX
MT
MN
MZ
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and
internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.
The IRF6641PbF device utilizes DirectFET® packaging technology.
DirectFET® packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging.
Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET® package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFET® package
also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation.
These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
Absolute Maximum Ratings
Parameter
Max.
Units
VGS
Gate-to-Source Voltage
±20
V
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V 
26
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V 
4.6
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V 
3.7
A
IDM
Pulsed Drain Current 
37
EAS
Single Pulse Avalanche Energy 
46
mJ
IAR
Avalanche Current 
11
A
PD @TC = 25°C
Power Dissipation
89
PD @TA = 25°C
Power Dissipation 
2.8
W
PD @TA = 70°C
Power Dissipation 
1.8
Linear Derating Factor
0.022
W/°C
TJ
Operating Junction and
-40 to + 150
°C
TSTG
Storage Temperature Range
Applicable DirectFET Outline and Substrate Outline (see p.6, 7 for details)
DIGITAL AUDIO MOSFET
DirectFET® ISOMETRIC
MZ
VDS
200
V
RDS(ON) typ. @ VGS = 10V
51
m
Qg typ.
34
nC
RG(int) typ.
1.0
Key Parameters
Features
 Latest MOSFET silicon technology
 Key parameters optimized for Class-D audio amplifier
applications
 Low RDS(on) for improved efficiency
 Low Qg for better THD and improved efficiency
 Low Qrr for better THD and lower EMI
 Low package stray inductance for reduced ringing and lower
EMI
 Can deliver up to 400 W per channel into 8
load in half-bridge
configuration amplifier
 Dual sided cooling compatible
 Compatible with existing surface mount technologies
 RoHS compliant, halogen-free
 Lead-free (qualified up to 260°C reflow)
Notes  through  are on page 9


同様の部品番号 - IRF6641PBF

メーカー部品番号データシート部品情報
logo
International Rectifier
IRF6641PBF IRF-IRF6641PBF Datasheet
447Kb / 10P
   Latest MOSFET silicon technology
More results

同様の説明 - IRF6641PBF

メーカー部品番号データシート部品情報
logo
International Rectifier
IRF6665PBF IRF-IRF6665PBF Datasheet
238Kb / 10P
   Latest MOSFET Silicon technology
IRF6775MPBF IRF-IRF6775MPBF_15 Datasheet
242Kb / 10P
   Latest MOSFET Silicon technology
IRF6643PBF IRF-IRF6643PBF Datasheet
437Kb / 9P
   Latest MOSFET silicon technology
IRF6775MPBF IRF-IRF6775MPBF Datasheet
242Kb / 10P
   Latest MOSFET Silicon technology
IRF6665PBF IRF-IRF6665PBF_15 Datasheet
238Kb / 10P
   Latest MOSFET Silicon technology
IRF66651PBF IRF-IRF66651PBF Datasheet
238Kb / 10P
   Latest MOSFET Silicon technology
IRF6785MPBF IRF-IRF6785MPBF_15 Datasheet
609Kb / 9P
   Latest MOSFET Silicon technology
IRF6643PBF IRF-IRF6643PBF_15 Datasheet
437Kb / 9P
   Latest MOSFET silicon technology
IRF6641PBF IRF-IRF6641PBF Datasheet
447Kb / 10P
   Latest MOSFET silicon technology
IRF6785MPBF IRF-IRF6785MPBF Datasheet
609Kb / 9P
   Latest MOSFET Silicon technology
More results


Html Pages

1 2 3 4 5 6 7 8 9 10


データシート ダウンロード

Go To PDF Page


リンク URL




プライバシーポリシー
ALLDATASHEET.JP
ALLDATASHEETはお客様のビジネスに役立ちますか?  [ DONATE ] 

Alldatasheetは   |   広告   |   お問い合わせ   |   プライバシーポリシー   |   リンク交換   |   メーカーリスト
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com