データシートサーチシステム |
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MTB010N02DFJ6 データシート(PDF) 4 Page - Cystech Electonics Corp. |
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MTB010N02DFJ6 データシート(HTML) 4 Page - Cystech Electonics Corp. |
4 / 9 page CYStech Electronics Corp. Spec. No. : C972DFJ6 Issued Date : 2015.04.01 Revised Date : 2015.09.03 Page No. : 4/9 MTB010N02DFJ6 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 10 20 30 40 50 60 70 80 0 1 2 3 4 5 6 7 8 9 10 VDS, Drain-Source Voltage(V) VGS=3.5V VGS=2.5V VGS=3V VGS=4V VGS=5V 10V,9V, 8V, 7V, 6V Brekdown Voltage vs Ambient Temperature 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=250 μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 0 10 20 30 40 50 60 70 80 90 100 0.1 1 10 100 ID, Drain Current(A) VGS=3V VGS=4.5V VGS=10V Reverse Drain Current vs Source-Drain Voltage 0 0.2 0.4 0.6 0.8 1 0 1 2 3 4 5 6 7 8 9 10 IDR, Reverse Drain Current (A) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 VGS, Gate-Source Voltage(V) ID=8.5A Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS=10V, ID=8.5A RDS(ON)@Tj=25°C : 10.9mΩ typ. |
同様の部品番号 - MTB010N02DFJ6 |
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同様の説明 - MTB010N02DFJ6 |
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