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IRF7769L1PBF データシート(PDF) 2 Page - International Rectifier |
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IRF7769L1PBF データシート(HTML) 2 Page - International Rectifier |
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2 / 10 page  2 www.irf.com © 2012 International Rectifier February 18, 2013 IRF7769L1TRPbF Notes:
Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400μs; duty cycle ≤ 2%. Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 100 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 2.8 3.5 m Ω VGS(th) Gate Threshold Voltage 2.0 2.7 4.0 V ΔVGS(th)/ΔTJ Gate Threshold Voltage Coefficient ––– -10 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 μA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 410 ––– ––– S Qg Total Gate Charge ––– 200 300 Qgs1 Pre-Vth Gate-to-Source Charge ––– 30 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 9.0 ––– nC Qgd Gate-to-Drain Charge ––– 110 165 Qgodr Gate Charge Overdrive ––– 51 ––– See Fig. 9 Qsw Switch Charge (Qgs2 + Qgd) ––– 119 ––– Qoss Output Charge ––– 53 ––– nC RG Gate Resistance ––– 1.5 ––– Ω td(on) Turn-On Delay Time ––– 44 ––– tr Rise Time ––– 32 ––– td(off) Turn-Off Delay Time ––– 92 ––– ns tf Fall Time ––– 41 ––– Ciss Input Capacitance ––– 11560 ––– Coss Output Capacitance ––– 1240 ––– pF Crss Reverse Transfer Capacitance ––– 590 ––– Coss Output Capacitance ––– 6665 ––– Coss Output Capacitance ––– 690 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 124 (Body Diode) A ISM Pulsed Source Current ––– ––– 500 (Body Diode) Ãg VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 75 112 ns Qrr Reverse Recovery Charge ––– 220 330 nC ID = 74A VDS = 80V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 10V VDS = 25V, ID = 74A VDS = 50V TJ = 25°C, IF = 74A, VDD = 50V di/dt = 100A/μs i TJ = 25°C, IS = 74A, VGS = 0V i showing the integral reverse p-n junction diode. VDS = VGS, ID = 250μA VDS = 100V, VGS = 0V Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 2mA VGS = 10V, ID = 74A i VDS = 16V, VGS = 0V VDD = 50V, VGS = 10VÃi VGS = 0V ƒ = 1.0MHz ID = 74A MOSFET symbol RG=1.8Ω VDS = 25V Conditions VGS = 0V, VDS = 80V, f=1.0MHz VGS = 0V, VDS = 1.0V, f=1.0MHz |
同様の部品番号 - IRF7769L1PBF_15 |
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同様の説明 - IRF7769L1PBF_15 |
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