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IRFAG40 データシート(PDF) 2 Page - International Rectifier

部品番号 IRFAG40
部品情報  Simple Drive Requirements
Download  7 Pages
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メーカー  IRF [International Rectifier]
ホームページ  http://www.irf.com
Logo IRF - International Rectifier

IRFAG40 データシート(HTML) 2 Page - International Rectifier

  IRFAG40 Datasheet HTML 1Page - International Rectifier IRFAG40 Datasheet HTML 2Page - International Rectifier IRFAG40 Datasheet HTML 3Page - International Rectifier IRFAG40 Datasheet HTML 4Page - International Rectifier IRFAG40 Datasheet HTML 5Page - International Rectifier IRFAG40 Datasheet HTML 6Page - International Rectifier IRFAG40 Datasheet HTML 7Page - International Rectifier  
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IRFAG40
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction to Case
1.0
RthJA
Junction to Ambient
30
Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
3.9
ISM
Pulse Source Current (Body Diode) ➀
——
1 6
VSD
Diode Forward Voltage
1.8
V
Tj = 25°C, IS =3.9A, VGS = 0V ➃
trr
Reverse Recovery Time
1000
nS
Tj = 25°C, IF =3.9A, di/dt ≤ 100A/µs
QRR
Reverse Recovery Charge
5.6
µC
VDD ≤ 50V ➃
t on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ
Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
1000
V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
1.4
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
3.5
VGS = 10V, ID =2.5A ➃
Resistance
4.0
VGS = 10V, ID =3.9A ➃
VGS(th)
Gate Threshold Voltage
2.0
4.0
V
VDS = VGS, ID =250µA
gfs
Forward Transconductance
3.3
S ( )VDS > 15V, IDS =2.5A ➃
IDSS
Zero Gate Voltage Drain Current
2 5
VDS=800V, VGS=0V
250
VDS = 800V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
Qg
Total Gate Charge
5 3
1 2 0
VGS= 10V, ID=3.9A
Qgs
Gate-to-Source Charge
5.3
1 2
nC
VDS =500V
Qgd
Gate-to-Drain (‘Miller’) Charge
2 9
6 6
td(on)
Turn-On Delay Time
3 0
VDD =400V*, ID =3.9A,
t r
Rise Time
5 0
RG =9.1Ω
td(off)
Turn-Off Delay Time
170
tf
Fall Time
5 0
LS + LD
Total Inductance
6.1
Ciss
Input Capacitance
1700
VGS = 0V, VDS = 25V
Coss
Output Capacitance
250
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
100
nA
nH
ns
µA
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
*Equipment Limitation


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