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IRFB4410ZPBF データシート(PDF) 7 Page - International Rectifier |
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IRFB4410ZPBF データシート(HTML) 7 Page - International Rectifier |
7 / 12 page 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 25, 2014 IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms Fig 22b. Unclamped Inductive Waveforms Fig 22a. Unclamped Inductive Test Circuit Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period * VGS = 5V for Logic Level Devices * + - + + + - - - RG VDD • dv/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test D.U.T Inductor Current 1K VCC DUT 0 L S 20K Vds Vgs Id Vgs(th) Qgs1 Qgs2 Qgd Qgodr RG IAS 0.01 Ω tp D.U.T L VDS + - VDD DRIVER A 15V 20V tp V(BR)DSS IAS VGS VDD VDS LD D.U.T + - Second Pulse Width < 1μs Duty Factor < 0.1% V GS V DS 90% 10% t d(on) t d(off) t r t f |
同様の部品番号 - IRFB4410ZPBF |
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同様の説明 - IRFB4410ZPBF |
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