IRFB5620PBF_15 datasheet(6/7 Pages) IRF

部品番号	IRFB5620PBF

部品情報	Key Parameters Optimized for Class-D Audio Amplifier Applications

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メーカー	IRF [International Rectifier]

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IRFB5620PbF

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Fig 18a. Switching Time Test Circuit

Fig 18b. Switching Time Waveforms

Fig 17b. Unclamped Inductive Waveforms

Fig 17a. Unclamped Inductive Test Circuit

tp

V(BR)DSS

IAS

RG

IAS

0.01

Ω

tp

D.U.T

L

VDS

+

- VDD

DRIVER

A

15V

20V

Fig 19a. Gate Charge Test Circuit

Fig 19b. Gate Charge Waveform

Vds

Vgs

Id

Vgs(th)

Qgs1 Qgs2

Qgd

Qgodr

Fig 16.

Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

D.U.T.

VDS

ID

IG

3mA

VGS

.3

µF

50K

Ω

.2

µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

VDS

90%

10%

VGS

td(on)

tr

td(off) tf

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

RD

VGS

RG

D.U.T.

10V

+

- VDD

VGS

CircuitLayoutConsiderations

• Low Stray Inductance

• Ground Plane

• LowLeakageInductance

Current Transformer

+

-

+

-

RG

VDD

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =

P.W.

Period

* VGS = 5V for Logic Level Devices

*

InductorCurrent

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