データシートサーチシステム |
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IRL5NJ7404 データシート(PDF) 1 Page - International Rectifier |
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IRL5NJ7404 データシート(HTML) 1 Page - International Rectifier |
1 / 7 page Absolute Maximum Ratings Parameter Units ID @ VGS = -10V, TC = 25°C Continuous Drain Current -11 ID @ VGS = -10V, TC = 100°C Continuous Drain Current -7.0 IDM Pulsed Drain Current À -44 PD @ TC = 25°C Max. Power Dissipation 50 W Linear Derating Factor 0.4 W/°C VGS Gate-to-Source Voltage ±12 V EAS Single Pulse Avalanche Energy Á 157 mJ IAR Avalanche Current À -11 A EAR Repetitive Avalanche Energy À 5.0 mJ dv/dt Peak Diode Recovery dv/dt  0.7 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range Package Mounting Surface Temperature 300 (for 5 s) Weight 1.0 (Typical) g °C A 03/04/13 www.irf.com 1 Product Summary Part Number BVDSS RDS(on) ID IRL5NJ7404 -20V 0.04 Ω -11A For footnotes refer to the last page HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5) 20V, P-CHANNEL Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, invert- ers, choppers, audio amplifiers and high-energy pulse circuits. SMD-0.5 Features: n Logic Level Gate Drive n Low RDS(on) n Avalanche Energy Ratings n Dynamic dv/dt Rating n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Light Weight LOGIC LEVEL IRL5NJ7404 PD-94052B |
同様の部品番号 - IRL5NJ7404_15 |
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同様の説明 - IRL5NJ7404_15 |
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