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IRL5NJ7404 データシート(PDF) 1 Page - International Rectifier

部品番号 IRL5NJ7404
部品情報  Simple Drive Requirements
Download  7 Pages
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メーカー  IRF [International Rectifier]
ホームページ  http://www.irf.com
Logo IRF - International Rectifier

IRL5NJ7404 データシート(HTML) 1 Page - International Rectifier

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Absolute Maximum Ratings
Parameter
Units
ID @ VGS = -10V, TC = 25°C Continuous Drain Current
-11
ID @ VGS = -10V, TC = 100°C Continuous Drain Current
-7.0
IDM
Pulsed Drain Current
À
-44
PD @ TC = 25°C
Max. Power Dissipation
50
W
Linear Derating Factor
0.4
W/°C
VGS
Gate-to-Source Voltage
±12
V
EAS
Single Pulse Avalanche Energy
Á
157
mJ
IAR
Avalanche Current
À
-11
A
EAR
Repetitive Avalanche Energy
À
5.0
mJ
dv/dt
Peak Diode Recovery dv/dt
Â
0.7
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Package Mounting Surface Temperature
300 (for 5 s)
Weight
1.0 (Typical)
g
°C
A
03/04/13
www.irf.com
1
Product Summary
Part Number
BVDSS
RDS(on)
ID
IRL5NJ7404
-20V
0.04
-11A
For footnotes refer to the last page
HEXFET® POWER MOSFET
SURFACE MOUNT (SMD-0.5)
20V, P-CHANNEL
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
SMD-0.5
Features:
n Logic Level Gate Drive
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
LOGIC LEVEL
IRL5NJ7404
PD-94052B


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