CSD17579Q3A_15 datasheet(6/15 Pages) TI

部品番号	CSD17579Q3A

部品情報	CSD17579Q3A 30 V N-Channel NexFET Power MOSFETs

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TC - Case Temperature (°C)

-50

-25

0

25

50

75

100

125

150

175

0

5

10

15

20

25

D012

VDS - Drain-to-Source Voltage (V)

0.1

1

10

100

0.1

1

10

100

1000

D010

DC

10 ms

1 ms

100 µs

10 µs

TAV - Time in Avalanche (ms)

0.01

0.02 0.03

0.050.07 0.1

0.2

0.3

0.5 0.7

1

2

3

5

7

10

20

30

50

70

100

D011

TC = 25GC

TC = 125GC

TC - Case Temperature (°C)

-75

-50

-25

0

25

50

75

100

125

150

175

0.6

0.8

1

1.2

1.4

1.6

1.8

D008

VGS = 4.5 V

VGS = 10 V

VSD - Source-to-Drain Voltage (V)

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

0.0001

0.001

0.01

0.1

1

10

100

D010

D009

TC = 25°C

TC = 125°C

CSD17579Q3A

SLPS527 – SEPTEMBER 2014

www.ti.com

Typical MOSFET Characteristics (continued)

(TA = 25°C unless otherwise stated)

ID = 8 A

Figure 8. Normalized On-State Resistance vs Temperature

Figure 9. Typical Diode Forward Voltage

Single Pulse,

Max RθJC = 5.4°C/W

Figure 10. Maximum Safe Operating Area

Figure 11. Single Pulse Unclamped Inductive Switching

Figure 12. Maximum Drain Current vs Temperature

6

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