データシートサーチシステム |
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BF998WR データシート(PDF) 9 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF998WR データシート(HTML) 9 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
9 / 12 page 1997 Sep 05 9 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR VDD = 12 V; GS = 3.3 mS; GL = 1 mS. L1 = L4 = 200 nH; 11 turns 0.5 mm copper wire, without spacing, internal diameter 3 mm. L2 = 2 cm, silvered 0.8 mm copper wire, 4 mm above ground plane. L3 = 2 cm, silvered 0.5 mm copper wire, 4 mm above ground plane. Fig.16 Gain control test circuit at f = 800 MHz. VAGC 1 nF 1 nF 1 nF 50 Ω input 50 Ω input 1 nF 270 k Ω 360 Ω 1.8 k Ω 140 k Ω 100 k Ω VDD VDD 1 nF MGC480 VDD 1 nF 1 nF L1 L2 C1 2-18 pF C2 0.5-3.5 pF C3 0.5-3.5 pF ,, ,, L3 L4 C4 4-40 pF ,, Fig.17 Automatic gain control characteristics measured in circuit of Fig.15. VDD = 12 V; f = 200 MHz; Tamb =25 °C. 010 0 −50 −40 MGC479 −30 −20 −10 24 6 8 IDSS= max typ min ∆G tr (dB) VAGC(V) VDD = 12 V; f = 800 MHz; Tamb =25 °C. Fig.18 Automatic gain control characteristics measured in circuit of Fig.16. 010 0 −50 −40 MGC478 −30 −20 −10 24 6 8 IDSS= max typ min ∆G tr (dB) VAGC(V) |
同様の部品番号 - BF998WR_15 |
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同様の説明 - BF998WR_15 |
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