BF1201_15 datasheet(3/16 Pages) JMNIC

部品番号	BF1201

部品情報	N-channel dual-gate PoLo MOS-FETs

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メーカー	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

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3 / 16 page

2000 Mar 29

3

Philips Semiconductors

Product speciﬁcation

N-channel dual-gate PoLo MOS-FETs

BF1201; BF1201R;

BF1201WR

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Ts is the temperature of the soldering point of the source lead.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source voltage

−

10

V

ID

drain current (DC)

−

30

mA

IG1

gate 1 current

−±10

mA

IG2

gate 2 current

−±10

mA

Ptot

total power dissipation

BF1201; BF1201R

Ts ≤ 113 °C; note 1

−

200

mW

BF1201WR

Ts ≤ 109 °C; note 1

−

200

mW

Tstg

storage temperature

−65

+150

°C

Tj

operating junction temperature

−

150

°C

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point

BF1201; BF1201R

185

K/W

BF1201WR

155

K/W

handbook, halfpage

050

(1)

(2)

Ts (°C)

Ptot

(mW)

100

200

250

0

200

150

100

50

MCD934

Fig.4 Power derating curve.

(1) BF1201WR.

(2) BF1201 and BF1201R.

同様の部品番号 - BF1201_15

メーカー	部品番号	データシート	部品情報
NXP Semiconductors	BF1201R	113Kb / 16P	N-channel dual-gate PoLo MOS-FETs 2000 Mar 29
	BF1201R	9Mb / 130P	RF Manual 16th edition June 2012
	BF1201WR	113Kb / 16P	N-channel dual-gate PoLo MOS-FETs 2000 Mar 29
	BF1201WR	9Mb / 130P	RF Manual 16th edition June 2012
Quanzhou Jinmei Electro...	BF1201_2015	127Kb / 16P	N-channel dual-gate PoLo MOS-FETs

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同様の説明 - BF1201_15

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