Features

• High Surge Capability

DO-5 Package

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

3. Stud is base.

Parameter

Symbol

1N3208 (R) 1N3209 (R)

Unit

Repetitive peak reverse voltage

50

100

V

RMS reverse voltage

35

70

V

DC blocking voltage

50

100

V

Silicon Standard

Recovery Diode

Conditions

300

210

300

200

1N3208 thru 1N3211R

1N3211 (R)

200

140

1N3210 (R)

2. Reverse polarity (R): Stud is anode.

DC blocking voltage

50

100

V

Continuous forward current

15

15

A

Operating temperature

-55 to 150 -55 to 150

°C

Storage temperature

-55 to 150 -55 to 150

°C

Parameter

Symbol

1N3208 (R) 1N3209 (R)

Unit

Diode forward voltage

1.5

1.5

10

10

μA

10

10

mA

Thermal characteristics

Thermal resistance, junction -

case

0.65

0.65

°C/W

V

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

-55 to 150

-55 to 150

300

200

Surge non-repetitive forward

current, Half Sine Wave

1N3210 (R)

0.65

0.65

1.5

1.5

10

Conditions

297

297

-55 to 150

15

15

-55 to 150

10

A

297

Reverse current

297

1N3211 (R)

10

10

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