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2SD2136G-X-T60-K データシート(PDF) 2 Page - Unisonic Technologies |
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2SD2136G-X-T60-K データシート(HTML) 2 Page - Unisonic Technologies |
2 / 4 page 2SD2136 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R204-011.E ABSOLUTE MAXIMUM RATINGS (TA=25°С, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 6 V Collector Current IC 3 A Peak Collector Current ICP 5 A Collector Dissipation SOT-223 PC 1 W TO-126/TO-126C TO-126S 1.5 W Junction Temperature TJ 150 °С Storage Temperature TSTG -55 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified ) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCEO IC=30mA, IB=0 60 V Collect Cutoff Current ICEO VCE=60V, IB=0 300 µA Collect Cutoff Current ICES VCE=60 V, VBE=0 200 µA Emitter Cutoff Current IEBO VEB=6 V, IC=0 1 mA DC Current Gain hFE1 VCE=4V ,IC=1A 40 250 hFE2 VCE=4V ,IC=3A 10 Collector-Emitter Saturation Voltage VCE(SAT) IC =3A, IB=0.375A 1.2 V Base-Emitter Voltage VBE VCE=4V ,IC=3A 1.8 V Current Gain Bandwidth Product fT VCE=15V, IE=0.1A, f =200MHz 220 MHZ Turn On Time tON IC = 1A, IB1 =0.1A, IB2 =0.1A 0.5 µS Storage Time tS 2.5 µS Fall Time tF 0.4 µS CLASSIFICATION OF hFE1 RANK P Q R RANGE 40-90 70-150 120-250 |
同様の部品番号 - 2SD2136G-X-T60-K |
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同様の説明 - 2SD2136G-X-T60-K |
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