データシートサーチシステム |
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2SC3468 データシート(PDF) 2 Page - Unisonic Technologies |
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2SC3468 データシート(HTML) 2 Page - Unisonic Technologies |
2 / 5 page 2SC3468 NPN EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R208-037.B ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-to-Base Voltage VCBO 300 V Collector-to-Emitter Voltage VCEO 300 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 100 mA Collector Current (Pulse) ICP 200 mA Collector Dissipation PC 1.0 W Junction Temperature TJ 0 ~ +125 °C Storage Temperature TSTG -65 ~ +125 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The device is guaranteed to meet performance specification within 0 °C ~70°C operating temperature range and assured by design from –20 °C ~85°C. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Cutoff Current ICBO VCB = 200V, IE = 0 0.1 µA Emitter Cutoff Current IEBO VEB = 4V, IC = 0 0.1 µA DC Current Gain hFE VCE = 10V, IC = 10mA 40 320 Gain-Bandwidth Product fT VCE = 30V, IC = 10mA 150 MHz Collector-to-Emitter Saturation Voltage VCE (sat) IC = 20mA, IB = 2mA 0.6 V Base-to-Emitter Saturation Voltage VBE (sat) IC = 20mA, IB = 2mA 1.0 V Collector-to-Base Breakdown Voltage V(BR) CBO IC = 10µA, IE = 0 300 V Collector-to-Emitter Breakdown Voltage V(BR) CEO IC = 1mA, RBE = ∞ 300 V Emitter-to-Base Breakdown Voltage V(BR) EBO IE = 10µA, IC = 0 5 V Output Capacitance Cob VCB = 30V, f = 1MHz 2.6 pF Reverse Transfer Capacitance Cre VCB = 30V, f = 1MHz 1.8 pF CLASSIFICATION of hFE RANK C D E F RANGE 40 ~ 80 60 ~ 120 100 ~ 200 160 ~ 320 |
同様の部品番号 - 2SC3468_15 |
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同様の説明 - 2SC3468_15 |
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