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TC429EPA データシート(PDF) 7 Page - Microchip Technology |
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TC429EPA データシート(HTML) 7 Page - Microchip Technology |
7 / 14 page 2002 Microchip Technology Inc. DS21416B-page 7 TC429 Three components make up total package power dissipation: • Capacitive load dissipation (PC) • Quiescent power (PQ) • Transition power (PT) The capacitive load-caused dissipation is a direct func- tion of frequency, capacitive load and supply voltage. The package power dissipation is: PC = f C VS 2 Where: f = Switching frequency C = Capacitive load VS = Supply voltage Quiescent power dissipation depends on input signal duty cycle. A logic low input results in a low-power dissipation mode with only 0.5mA total current drain. Logic high signals raise the current to 5mA maximum. The quiescent power dissipation is: PQ = VS (D (IH) + (1 – D) IL) Where: IH = Quiescent current with input high (5mA max) IL = Quiescent current with input low (0.5mA max) D = Duty cycle Transition power dissipation arises because the output stage N- and P-channel MOS transistors are ON simultaneously for a very short period when the output changes. The transition package power dissipation is approximately: PT = f VS (3.3 x 10 –9 A • Sec) An example shows the relative magnitude for each item. C = 2500pF VS = 15V D = 50% f = 200kHz PD = Package power dissipation = PC + PT + PQ = 113mW + 10mW + 41mW = 164mW Maximum operating temperature = TJ – θJA (PD) = 125 °C Where: TJ = Maximum allowable junction temperature (+150 °C) θJA = Junction-to-ambient thermal resistance (150 °C/W, CERDIP) Note: Ambient operating temperature should not exceed +85 °C for IJA devices or +125°C for MJA devices. TABLE 3-1: MAXIMUM OPERATING FREQUENCIES CONDITIONS: 1. CERDIP Package ( θJA =150°C/W) 2. TA = +25°C 3. CL = 2500pF FIGURE 3-5: PEAK OUTPUT CURRENT CAPABILITY 3.5 POWER-ON OSCILLATION Note: It is extremely important that all MOSFET Driver applications be evaluated for the possibility of having High-Power Oscillations occurring during the power-on cycle. Power-on oscillations are due to trace size and layout as well as component placement. A ‘quick fix’ for most applications which exhibit power-on oscillation problems is to place approximately 10k Ω in series with the input of the MOSFET driver. VS fMAX 18V 500kHz 15V 700kHz 10V 1.3MHz 5V >2MHz TIME (5 µs/DIV) VS = 18V RL = 0.1Ω 5V INPUT OUTPUT 5 µs 500mV 5V/DIV 500mV/DIV (5 AMP/DIV) |
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同様の説明 - TC429EPA |
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