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TC429EPA データシート(PDF) 7 Page - Microchip Technology

部品番号 TC429EPA
部品情報  6A Single High-Speed, CMOS Power MOSFET Driver
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メーカー  MICROCHIP [Microchip Technology]
ホームページ  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

TC429EPA データシート(HTML) 7 Page - Microchip Technology

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 2002 Microchip Technology Inc.
DS21416B-page 7
TC429
Three components make up total package power
dissipation:
• Capacitive load dissipation (PC)
• Quiescent power (PQ)
• Transition power (PT)
The capacitive load-caused dissipation is a direct func-
tion of frequency, capacitive load and supply voltage.
The package power dissipation is:
PC = f C VS
2
Where:
f
= Switching frequency
C
= Capacitive load
VS = Supply voltage
Quiescent power dissipation depends on input signal
duty cycle. A logic low input results in a low-power
dissipation mode with only 0.5mA total current drain.
Logic high signals raise the current to 5mA maximum.
The quiescent power dissipation is:
PQ = VS (D (IH) + (1 – D) IL)
Where:
IH = Quiescent current with input high (5mA max)
IL = Quiescent current with input low
(0.5mA max)
D
= Duty cycle
Transition power dissipation arises because the output
stage N- and P-channel MOS transistors are ON
simultaneously for a very short period when the output
changes.
The
transition
package
power
dissipation
is
approximately:
PT = f VS (3.3 x 10
–9 A • Sec)
An example shows the relative magnitude for each
item.
C
= 2500pF
VS = 15V
D
= 50%
f
= 200kHz
PD = Package power dissipation = PC + PT + PQ
= 113mW + 10mW + 41mW
= 164mW
Maximum operating temperature = TJ – θJA (PD)
= 125
°C
Where:
TJ = Maximum allowable junction temperature
(+150
°C)
θJA = Junction-to-ambient thermal resistance
(150
°C/W, CERDIP)
Note:
Ambient operating temperature should not
exceed +85
°C for IJA devices or +125°C for
MJA devices.
TABLE 3-1:
MAXIMUM OPERATING
FREQUENCIES
CONDITIONS: 1. CERDIP Package (
θJA =150°C/W)
2. TA = +25°C
3. CL = 2500pF
FIGURE 3-5:
PEAK OUTPUT
CURRENT CAPABILITY
3.5
POWER-ON OSCILLATION
Note:
It is extremely important that all MOSFET
Driver
applications
be
evaluated
for
the possibility
of
having
High-Power
Oscillations occurring during the power-on
cycle.
Power-on oscillations are due to trace size and layout
as well as component placement. A ‘quick fix’ for most
applications
which
exhibit
power-on
oscillation
problems is to place approximately 10k
Ω in series with
the input of the MOSFET driver.
VS
fMAX
18V
500kHz
15V
700kHz
10V
1.3MHz
5V
>2MHz
TIME (5
µs/DIV)
VS = 18V
RL = 0.1Ω
5V
INPUT
OUTPUT
5
µs
500mV
5V/DIV
500mV/DIV
(5 AMP/DIV)


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