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6N60L-TMS4-T データシート(PDF) 3 Page - Unisonic Technologies |
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6N60L-TMS4-T データシート(HTML) 3 Page - Unisonic Technologies |
3 / 7 page 6N60-C Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 7 www.unisonic.com.tw QW-R502-A50.C ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 6.2 A Continuous Drain Current ID 6.2 A Pulsed Drain Current (Note 2) IDM 24.8 A Avalanche Energy Single Pulsed (Note 3) EAS 310 mJ Repetitive (Note 2) EAR 13 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 ns Power Dissipation TO-220/TO-220F1 PD 40 W TO-251S/TO-251S2/ TO-251S4 55 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L = 17mH, IAS = 6A, VDD = 90V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 6.2A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient TO-220/TO-220F1 θJA 62.5 °C/W TO-251S/TO-251S2/ TO-251S4 110 °C/W Junction to Case TO-220/TO-220F1 θJC 3.2 °C/W TO-251S/TO-251S2/ TO-251S4 2.27 °C/W |
同様の部品番号 - 6N60L-TMS4-T |
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同様の説明 - 6N60L-TMS4-T |
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