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SI9926CD データシート(PDF) 4 Page - Vishay Telefunken |
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SI9926CD データシート(HTML) 4 Page - Vishay Telefunken |
4 / 10 page www.vishay.com 4 Document Number: 68606 S09-0704-Rev. B, 27-Apr-09 Vishay Siliconix Si9926CDY New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150 °C 10 VSD - Source-to-Drain Voltage (V) 1 100 TJ = 25 °C 0.4 0.6 0.8 1.0 1.2 1.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.000 0.010 0.020 0.030 0.040 0246 8 10 VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID = 8.3 A 0 5 10 15 20 25 30 Time (s) 10 1000 0.1 0.01 0.001 100 1 Safe Operating Area, Junction-to-Ambient VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse Limited by RDS(on)* BVDSS Limited DC 10 s 1 s 100 ms 10 ms 1 ms 100 µs |
同様の部品番号 - SI9926CD |
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同様の説明 - SI9926CD |
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