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SIA533EDJ データシート(PDF) 2 Page - Vishay Telefunken |
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SIA533EDJ データシート(HTML) 2 Page - Vishay Telefunken |
2 / 14 page www.vishay.com 2 Document Number: 65706 S10-0214-Rev. A, 25-Jan-10 Vishay Siliconix SiA533EDJ New Product Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile ( www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 110 °C/W. THERMAL RESISTANCE RATINGS Parameter Symbol N-Channel P-Channel Unit Typ. Max. Typ. Max. Maximum Junction-to-Ambientb, f t ≤ 5 s RthJA 52 65 52 65 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 12.5 16 12.5 16 SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA N-Ch 12 V VGS = 0 V, ID = - 250 µA P-Ch - 12 VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA N-Ch 19 mV/°C ID = - 250 µA P-Ch - 5.7 VGS(th) Temperature Coefficient ΔV GS(th)/TJ ID = 250 µA N-Ch - 2.7 ID = - 250 µA P-Ch 1.7 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA N-Ch 0.4 1.0 V VDS = VGS, ID = - 250 µA P-Ch - 0.4 - 1.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 4.5 V N-Ch ± 0.5 µA P-Ch ± 0.5 VDS = 0 V, VGS = ± 8 V N-Ch ± 5 P-Ch ± 5 Zero Gate Voltage Drain Current IDSS VDS = 12 V, VGS = 0 V N-Ch 1 VDS = - 12 V, VGS = 0 V P-Ch - 1 VDS = 12 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 12 V, VGS = 0 V, TJ = 55 °C P-Ch - 10 On-State Drain Currentb ID(on) VDS ≥ 5 V, VGS = 4.5 V N-Ch 10 A VDS ≤ - 5 V, VGS = - 4.5 V P-Ch - 10 Drain-Source On-State Resistanceb RDS(on) VGS = 4.5 V, ID = 4.6 A N-Ch 0.028 0.034 Ω VGS = - 4.5 V, ID = - 3.6 A P-Ch 0.048 0.059 VGS = 2.5 V, ID = 4.2 A N-Ch 0.032 0.040 VGS = - 2.5 V, ID = - 3.1 A P-Ch 0.066 0.081 VGS = 1.8 V, ID = 3.8 A N-Ch 0.038 0.050 VGS = - 1.8 V, ID = - 2.6 A P-Ch 0.093 0.115 VGS = 1.5 V, ID = 1.5 A N-Ch 0.045 0.070 VGS = - 1.5 V, ID = - 0.5 A P-Ch 0.120 0.215 Forward Transconductanceb gfs VDS = 6 V, ID = 4.6 A N-Ch 21 S VDS = - 6 V, ID = - 3.6 A P-Ch 11 Input Capacitance Ciss N-Channel VDS = 6 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 6 V, VGS = 0 V, f = 1 MHz N-Ch 420 pF P-Ch 545 Output Capacitance Coss N-Ch 100 P-Ch 192 Reverse Transfer Capacitance Crss N-Ch 62 P-Ch 175 |
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