SIA533EDJ datasheet(2/14 Pages) TFUNK

部品番号	SIA533EDJ

部品情報	N- and P-Channel 12-V (D-S) MOSFET

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Document Number: 65706

S10-0214-Rev. A, 25-Jan-10

Vishay Siliconix

SiA533EDJ

New Product

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See solder profile (

www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 110 °C/W.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

N-Channel

P-Channel

Unit

Typ.

Max.

Typ.

Max.

Maximum Junction-to-Ambientb, f

t

≤ 5 s

RthJA

52

65

52

65

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

12.5

16

12.5

16

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

N-Ch

12

V

VGS = 0 V, ID = - 250 µA

P-Ch

- 12

VDS Temperature Coefficient

ΔV

DS/TJ

ID = 250 µA

N-Ch

19

mV/°C

ID = - 250 µA

P-Ch

- 5.7

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

ID = 250 µA

N-Ch

- 2.7

ID = - 250 µA

P-Ch

1.7

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

N-Ch

0.4

1.0

V

VDS = VGS, ID = - 250 µA

P-Ch

- 0.4

- 1.0

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 4.5 V

N-Ch

± 0.5

µA

P-Ch

± 0.5

VDS = 0 V, VGS = ± 8 V

N-Ch

± 5

P-Ch

± 5

Zero Gate Voltage Drain Current

IDSS

VDS = 12 V, VGS = 0 V

N-Ch

1

VDS = - 12 V, VGS = 0 V

P-Ch

- 1

VDS = 12 V, VGS = 0 V, TJ = 55 °C

N-Ch

10

VDS = - 12 V, VGS = 0 V, TJ = 55 °C

P-Ch

- 10

On-State Drain Currentb

ID(on)

VDS ≥ 5 V, VGS = 4.5 V

N-Ch

10

A

VDS ≤ - 5 V, VGS = - 4.5 V

P-Ch

- 10

Drain-Source On-State Resistanceb

RDS(on)

VGS = 4.5 V, ID = 4.6 A

N-Ch

0.028

0.034

Ω

VGS = - 4.5 V, ID = - 3.6 A

P-Ch

0.048

0.059

VGS = 2.5 V, ID = 4.2 A

N-Ch

0.032

0.040

VGS = - 2.5 V, ID = - 3.1 A

P-Ch

0.066

0.081

VGS = 1.8 V, ID = 3.8 A

N-Ch

0.038

0.050

VGS = - 1.8 V, ID = - 2.6 A

P-Ch

0.093

0.115

VGS = 1.5 V, ID = 1.5 A

N-Ch

0.045

0.070

VGS = - 1.5 V, ID = - 0.5 A

P-Ch

0.120

0.215

Forward Transconductanceb

gfs

VDS = 6 V, ID = 4.6 A

N-Ch

21

S

VDS = - 6 V, ID = - 3.6 A

P-Ch

11

Input Capacitance

Ciss

N-Channel

VDS = 6 V, VGS = 0 V, f = 1 MHz

P-Channel

VDS = - 6 V, VGS = 0 V, f = 1 MHz

N-Ch

420

pF

P-Ch

545

Output Capacitance

Coss

N-Ch

100

P-Ch

192

Reverse Transfer Capacitance

Crss

N-Ch

62

P-Ch

175

同様の部品番号 - SIA533EDJ

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SIA533EDJ	278Kb / 14P	N- and P-Channel 12-V (D-S) MOSFET Rev. A, 25-Jan-10
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	SIA533EDJ-T1-GE3	278Kb / 14P	N- and P-Channel 12-V (D-S) MOSFET Rev. A, 25-Jan-10
	SIA533EDJ-T1-GE3	405Kb / 14P	N- and P-Channel 12 V (D-S) MOSFET 01-Jan-2022
	SIA533EDJ	405Kb / 14P	N- and P-Channel 12 V (D-S) MOSFET 01-Jan-2022

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