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DZ1100N22K データシート(PDF) 2 Page - Infineon Technologies AG |
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DZ1100N22K データシート(HTML) 2 Page - Infineon Technologies AG |
2 / 10 page Netz-Dioden-Modul Rectifier Diode Module Technische Information / technical information DZ1100N22K Date of Publication 2014-04-10 Revision 3.1 2/10 Seite/page Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values DZ1100N22K Periodische Spitzensperrspannung repetitive peak reverse voltages Tvj = -40°C... Tvj max VRRM 2200 V Stoßspitzensperrspannung non-repetitive peak reverse voltage Tvj = +25°C... Tvj max VRSM 2300 V Durchlaßstrom-Grenzeffektivwert maximum RMS on-state current IFRMSM 1800 A Dauergrenzstrom average on-state current TC = 100°C IFAVM 1100 A Stoßstrom-Grenzwert surge current Tvj = 25°C, tP = 10ms Tvj = Tvj max, tP = 10ms IFSM 48000 40000 A A Grenzlastintegral I²t-value Tvj = 25°C, tP = 10ms Tvj = Tvj max, tP = 10ms I²t 11520000 8000000 A²s A²s Charakteristische Werte / Characteristic values Durchlaßspannung on-state voltage Tvj = Tvj max , iF = 3000A vF max. 1,11 V Schleusenspannung threshold voltage Tvj = Tvj max V(TO) max. 0,75 V Ersatzwiderstand slope resistance Tvj = Tvj max rT max. 0,073 mΩ Sperrstrom reverse current Tvj = Tvj max , vR = VRRM iR max. 80 mA Isolations-Prüfspannung insulation test voltage RMS, f = 50Hz, t = 1 sec RMS, f = 50Hz, t = 1 min VISOL 3,6 3 kV kV Thermische Eigenschaften / Thermal properties Innerer Wärmewiderstand thermal resistance, junction to case pro Modul / per Module, Θ = 180° sin pro Modul / per Module, DC RthJC max. max. 0,0480 0,0466 K/W K/W Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Modul / per Module pro Zweig / per arm RthCH max. 0,015 K/W Höchstzulässige Sperrschichttemperatur maximum junction temperature Tvj max 150 °C Betriebstemperatur operating temperature Tc op - 40...+150 °C Lagertemperatur storage temperature Tstg - 40...+150 °C prepared by: CD date of publication: 2014-04-10 approved by: ML revision: 3.1 |
同様の部品番号 - DZ1100N22K |
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同様の説明 - DZ1100N22K |
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