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SI4168DY データシート(PDF) 1 Page - Vishay Telefunken |
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SI4168DY データシート(HTML) 1 Page - Vishay Telefunken |
1 / 10 page Vishay Siliconix Si4168DY Document Number: 69005 S-82668-Rev. A, 03-Nov-08 www.vishay.com 1 N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • Notebook DC/DC PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (Typ.) 30 0.0057 at VGS = 10 V 24 13.8 nC 0.0076 at VGS = 4.5 V 21 Ordering Information: Si4168DY-T1-GE3 (Lead (Pb)-free and Halogen-free) SO-8 SD SD SD GD 5 6 7 8 Top View 2 3 4 1 N-Channel MOSFET G D S Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 24 A TC = 70 °C 19.4 TA = 25 °C 16b, c TA = 70 °C 14b, c Pulsed Drain Current IDM 70 Avalanche Current L = 0.1 mH IAS 35 Avalanche Energy EAS 61 mJ Continuous Source-Drain Diode Current TC = 25 °C IS 4.7 A TA = 25 °C 2.1b, c Maximum Power Dissipation TC = 25 °C PD 5.7 W TC = 70 °C 3.6 TA = 25 °C 2.5b, c TA = 70 °C 1.6b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t ≤ 10 s RthJA 35 50 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 18 22 |
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