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SI4172DY データシート(PDF) 4 Page - Vishay Telefunken |
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SI4172DY データシート(HTML) 4 Page - Vishay Telefunken |
4 / 10 page www.vishay.com 4 Document Number: 69000 S-82665-Rev. A, 03-Nov-08 Vishay Siliconix Si4172DY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 TJ = 150 °C TJ = 25 °C VSD -Source-to-Drain Voltage (V) 1.0 1.2 1.4 1.6 1.8 2.0 2.2 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.000 0.005 0.010 0.015 0.020 0.025 0.030 02 4 6 8 10 TJ =25 °C TJ = 125 °C VGS - Gate-to-Source Voltage (V) 0 50 10 Time (s) 20 1 100 600 10 10-1 10-2 10-3 30 40 Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 TA =25 °C Single Pulse 100 µA 1s 10 s Limited byRDS(on)* BVDSS Limited 1ms 10 ms 100 ms DC VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified |
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同様の説明 - SI4172DY |
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