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SI4620DY データシート(PDF) 3 Page - Vishay Telefunken

部品番号 SI4620DY
部品情報  N-Channel 30-V (D-S) MOSFET with Schottky Diode
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メーカー  TFUNK [Vishay Telefunken]
ホームページ  http://www.vishay.com
Logo TFUNK - Vishay Telefunken

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Document Number: 73862
S09-1341-Rev. D, 13-Jul-09
www.vishay.com
3
Vishay Siliconix
Si4620DY
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
2.6
A
Pulse Diode Forward Current
ISM
40
Body Diode Voltage
VSD
IS = 1.7 A, VGS = 0 V
0.8
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C
20
40
ns
Body Diode Reverse Recovery Charge
Qrr
14
30
nC
Reverse Recovery Fall Time
ta
14
ns
Reverse Recovery Rise Time
tb
6
SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Forward Voltage Drop
VF
IF = 3 A
0.39
0.470
V
IF = 3 A, TJ = 125 °C
0.35
0.420
Maximum Reverse Leakage Current
Irm
Vr = 5 V
0.1
0.2
mA
Vr = 5 V, TJ = 85 °C
3.5
17.5
Vr = 5 V, TJ = 106 °C
12
60
Vr = 30 V
0.22
0.5
Vr = 30 V, TJ = 85 °C
10
50
Vr = 30 V, TJ = 125 °C
40
200
Junction Capacitance
CT
Vr = 15 V
100
pF


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