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SI7370DP データシート(PDF) 2 Page - Vishay Telefunken |
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SI7370DP データシート(HTML) 2 Page - Vishay Telefunken |
2 / 12 page www.vishay.com 2 Document Number: 71874 S09-0270-Rev. F, 16-Feb-09 Vishay Siliconix Si7370DP Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 4.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 µA VDS = 60 V, VGS = 0 V, TJ = 55°C 5 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 50 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 12 A 0.009 0.011 Ω VGS = 6.0 V, ID = 10 A 0.0105 0.013 Forward Transconductancea gfs VDS = 15 V, ID = 10 A 50 S Diode Forward Voltagea VSD IS = 3.0 A, VGS = 0 V 0.75 1.2 V Dynamicb Total Gate Charge Qg VDS = 30 V, VGS = 10 V, ID = 12 A 46 57 nC Gate-Source Charge Qgs 11.5 Gate-Drain Charge Qgd 11.5 Gate Resistance Rg 0.20.851.2 Ω Turn-On Delay Time td(on) VDD = 30 V, RL = 30 Ω ID ≅ 1.0 A, VGEN = 10 V, RG = 6 Ω 16 25 ns Rise Time tr 12 18 Turn-Off Delay Time td(off) 50 75 Fall Time tf 30 45 Source-Drain Reverse Recovery Time trr IF = 3.0 A, dI/dt = 100 A/µs 40 60 Output Characteristics 0 10 20 30 40 50 02468 10 VGS = 10 V thru 5 V VDS - Drain-to-Source Voltage (V) 4 V 2 V, 3 V Transfer Characteristics 0 10 20 30 40 50 0123456 TC = 125˚C -55 ˚C 25 ˚C VGS - Gate-to-Source Voltage (V) |
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同様の説明 - SI7370DP |
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