データシートサーチシステム |
|
SI7478DP データシート(PDF) 3 Page - Vishay Telefunken |
|
SI7478DP データシート(HTML) 3 Page - Vishay Telefunken |
3 / 12 page Document Number: 72913 S09-0271-Rev. D, 16-Feb-09 www.vishay.com 3 Vishay Siliconix Si7478DP TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.000 0.002 0.004 0.006 0.008 0.010 0.012 0 102030405060 VGS = 10 V ID - Drain Current (A) VGS = 4.5 V 0 2 4 6 8 10 0 20406080 100 120 VDS = 30 V ID = 20 A Qg - Total Gate Charge (nC) VSD - Source-to-Drain Voltage (V) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150 °C TJ = 25 °C 60 10 1 Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 2000 4000 6000 8000 10000 0 102030405060 Coss Ciss VDS - Drain-to-Source Voltage (V) Crss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 20 A TJ - Junction Temperature (°C) 0.000 0.004 0.008 0.012 0.016 0.020 02468 10 VGS - Gate-to-Source Voltage (V) ID = 20 A |
同様の部品番号 - SI7478DP |
|
同様の説明 - SI7478DP |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |