SI7308DN datasheet(1/13 Pages) TFUNK

部品番号	SI7308DN

部品情報	N-Channel 60-V (D-S) MOSFET

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Vishay Siliconix

Si7308DN

Document Number: 73419

S-83051-Rev. B, 29-Dec-08

www.vishay.com

1

N-Channel 60-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Available

•

TrenchFET® Power MOSFET

•

Low Thermal Resistance PowerPAK® Package

with Small Size and Low 1.07 mm Profile

APPLICATIONS

•

CCFL Inverter

•

Class-D Amp

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ.)

60

0.058 at VGS = 10 V

6

13 nC

0.072 at VGS = 4.5 V

6

Ordering Information: Si7308DN-T1-E3 (Lead (Pb)-free)

Si7308DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

G

D

3.30 mm

PowerPAK 1212-8

Bottom View

N-Channel MOSFET

G

D

S

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 81 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

6a

A

TC = 70 °C

6a

TA = 25 °C

5.4b, c

TA = 70 °C

4.3b, c

Pulsed Drain Current (10 µs Width)

IDM

20

Continuous Source-Drain Diode Current

TC = 25 °C

IS

6a

TA = 25 °C

2.7b, c

Avalanche Current

L = 0.1 mH

IAS

11

Single-Pulse Avalanche Energy

EAS

6.1

mJ

Maximum Power Dissipation

TC = 25 °C

PD

19.8

W

TC = 70 °C

12.7

TA = 25 °C

3.2b, c

TA = 70 °C

2.1b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, f

RthJA

31

39

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

56.3

同様の部品番号 - SI7308DN

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SI7308DN	541Kb / 13P	N-Channel 60-V (D-S) MOSFET Rev. B, 29-Dec-08
	SI7308DN	538Kb / 13P	N-Channel 60-V (D-S) MOSFET 01-Jan-2022
	SI7308DN-T1-E3	541Kb / 13P	N-Channel 60-V (D-S) MOSFET Rev. B, 29-Dec-08
	SI7308DN-T1-GE3	541Kb / 13P	N-Channel 60-V (D-S) MOSFET Rev. B, 29-Dec-08
	SI7308DN	538Kb / 13P	N-Channel 60-V (D-S) MOSFET 01-Jan-2022

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同様の説明 - SI7308DN

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