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FCDN614 データシート(PDF) 3 Page - ON Semiconductor |
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FCDN614 データシート(HTML) 3 Page - ON Semiconductor |
3 / 4 page FCDN614−UBM http://onsemi.com 3 SPECIFICATIONS (Cont’d) Table 5. ELECTRICAL CHARACTERISTICS (Note 1) Symbol Parameter Test Conditions Min Typ Max Units ILEAK Leakage Current V = ±4 V, 150°C (Note 2) V = ±4 V, 25°C (VL1±) V = +10 V, 25°C (VL2+) 4.0 0.3 (IL1±) 0.5 (IL2+) mA mA mA VCL Signal Clamp Voltage Positive Polarity on Signal Node (VCL+) Negative Polarity on Signal Node (VCL−) TA = 25°C at 10 mA (ICL+) at −10 mA (ICL−) +10.5 −9.0 +12.0 −7.0 +15.0 −5.0 V VESD ESD Protection − Withstand Voltage: Human Body Model (MIL−STD−883, Method 3015) TA = 25°C (Note 2) ±8 kV VCL_ESD Clamping Voltage during Transient Events on Signal Node IPP = 1 A, tP = 8/20 ms Positive Transients Negative Transients (Note 2) +22 −15 V CIN Input Capacitance At 1 MHz, 30 mV osc. Level, 0 VDC Bias At 1 MHz, 30 mV osc. Level, 3 VDC Bias (Note 2) 4.7 3.0 pF 1. Operating characteristics are over standard operating conditions unless otherwise specified. 2. This parameter is guaranteed by design and/or characterization. MECHANICAL DETAILS Table 6. MECHANICAL SPECIFICATIONS Parameter Condition Units Composition Silicon Wafer, p+ Doped Die Shape Square Length (Stepping Size) 240 mm Width (Stepping Size) 240 mm Thickness 4 mils Saw Street Widths (Space between Devices on Wafer) (Note 1) 70 (X−Direction) 70 (Y−Direction) mm Top Pad Length 125 mm Top Pad Width 125 mm Top Pad Composition Al (Aluminum) Back Metal (Underside) Bare Silicon Die (Stepping Size) 240 mm Passivation Opening 70 mm Active Size 160 mm Active to PA Opening 5 mm 1. The saw street is defined as the passivation−free area between devices. Figure 3. Package Dimensions Top Pad Opening: 125 mm x 125 mm Stepping Size: 240 mm x 240 mm |
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