MTV16N50E datasheet(6/10 Pages) ONSEMI

部品番号	MTV16N50E

部品情報	Power Field Effect Transistor

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メーカー	ONSEMI [ON Semiconductor]

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MTV16N50E

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6

SAFE OPERATING AREA

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

25

50

75

100

125

15

t, TIME (s)

Figure 13. Thermal Response

Figure 14. Diode Reverse Recovery Waveform

di/dt

trr

ta

tp

IS

0.25 IS

TIME

IS

tb

0

600

400

300

200

500

100

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

10

VGS = 20 V

SINGLE PULSE

TC = 25°C

1

10

100

0.1

dc

100

μs

1 ms

10 ms

1000

100

ID = 16 A

1

0.1

0.001

0.01

1.0E−05

1.0E−04

1.0E−03

1.0E−02

1.0E−01

1.0E+00

1.0E+01

RθJC(t) = r(t) RθJC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) RθJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

0.02

D = 0.5

0.05

0.01

SINGLE PULSE

0.1

0.2

700

800

900

同様の部品番号 - MTV16N50E

メーカー	部品番号	データシート	部品情報
Motorola, Inc	MTV16N50E	276Kb / 10P	TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
Inchange Semiconductor ...	MTV16N50E	298Kb / 2P	isc N-Channel MOSFET Transistor

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