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N01S830BAT22I データシート(PDF) 9 Page - ON Semiconductor |
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N01S830BAT22I データシート(HTML) 9 Page - ON Semiconductor |
9 / 13 page N01S830HA, N01S830BA http://onsemi.com 9 Table 5. MODE REGISTER Bit Function 0 Hold Function 1 = Hold function disabled 0 = Hold function enabled (Default) 1 Reserved 2 Reserved 3 Reserved 4 Reserved 5 Reserved 6 Operating Mode Bit 7 Bit 6 0 0 = Word Mode 1 0 = Page Mode 0 1 = Burst Mode (Default) 1 1 = Reserved 7 Power-Up State The serial SRAM enters a know state at power-up time. The device is in low-power standby state with CS = 1. A low level on CS is required to enter a active state. Battery Back-Up Operation The Battery Back-Up function is available on the BBU version of the serial SRAM. This version of the SRAM cannot operate in the QUAD mode since the SIO3 input is used for the VBAT connection. A standard coin cell battery should be connected to the VBAT pin. On chip circuitry monitors the VCC pin and when it is determined that the main VCC power supply is turning off, the device automatically switches the memory array to VBAT power input. When in battery back-up mode and 3.0 to 3.4 V power supplied to the VBAT input, memory data is retained in the SRAM array and all existing interface and operating mode information is retained. Figure 15. Battery Back-Up Version Schematics SO NC VSS VCC SCK SI Coin Cell Battery 3.0 to 3.4 V VBAT Serial SRAM CS Table 6. ABSOLUTE MAXIMUM RATINGS Item Symbol Rating Units Voltage on any pin relative to VSS VIN,OUT –0.3 to VCC + 0.3 V Voltage on VCC Supply Relative to VSS VCC –0.3 to 5.5 V Power Dissipation PD 500 mW Storage Temperature TSTG –40 to 125 °C Operating Temperature TA -40 to +85 °C Soldering Temperature and Time TSOLDER 260°C, 10 sec °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Table 7. OPERATING CHARACTERISTICS (OVER SPECIFIED TEMPERATURE RANGE) Item Symbol Test Conditions Min Typ (Note 1) Max Units Supply Voltage VCC 2.5 5.5 V Data Retention Voltage (Note 2) VDR 1.0 V Input High Voltage VIH 0.7 VCC VCC + 0.3 V Input Low Voltage VIL −0.3 0.1 VCC V Output High Voltage VOH IOH = −0.4 mA VCC − 0.2 V Output Low Voltage VOL IOL = 1 mA 0.2 V Input Leakage Current ILI CS = VCC, VIN = 0 to VCC 1.0 mA Output Leakage Current ILO CS = VCC, VOUT = 0 to VCC 1.0 mA Operating Current ICC f = 20 MHz, IOUT = 0, SPI / DUAL 10 mA f = 20 MHz, IOUT = 0, QUAD 20 Standby Current ISB CS = VCC, VIN = VSS or VCC 4 10 mA 1. Typical values are measured at VCC = VCC Typ., TA = 25°C and are not 100% tested. 2. Typical lower limit of VCC when data will be retained in the memory array, not 100% tested. |
同様の部品番号 - N01S830BAT22I |
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同様の説明 - N01S830BAT22I |
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