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BC817-40W データシート(PDF) 2 Page - ON Semiconductor |
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BC817-40W データシート(HTML) 2 Page - ON Semiconductor |
2 / 5 page BC817−40W www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = 10 mA) V(VR)CEO 45 − − V Collector − Emitter Breakdown Voltage (VEB = 0 V, IC = 10 mA) V(VR)CES 50 − − V Emitter − Base Breakdown Voltage (IE = 1.0 mA) V(VR)EBO 5.0 − − V Collector Cutoff Current (VCB = 20 V) (VCB = 20 V, TA = 150°C) ICBO − − − − 100 5.0 nA mA ON CHARACTERISTICS DC Current Gain (Note 2) (IC = 100 mA, VCE = 1.0 V) (IC = 500 mA, VCE = 1.0 V) hFE 250 40 − − 600 − − Collector − Emitter Saturation Voltage (Note 2) (IC = 500 mA, IB = 50 mA) VCE(sat) − − 0.7 V Base − Emitter On Voltage (Note 2) (IC = 500 mA, VCE = 1.0 V) VBE(on) − − 1.2 V SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) fT 100 − − MHz Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo − 10 − pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2% |
同様の部品番号 - BC817-40W |
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同様の説明 - BC817-40W |
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