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2N3421 データシート(PDF) 1 Page - Microsemi Corporation |
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2N3421 データシート(HTML) 1 Page - Microsemi Corporation |
1 / 3 page MSC0983A.DOC 12-02-98 2N3421 SYMBOL VCBO* Collector-Base Voltage 125 Volts VCEO* Collector-Emitter Voltage 80 Volts VEBO* Emitter-Base Voltage 8 Volts IC* D.C. Collector Current 3 Amps IC* Peak Collector Current 5 Amps TSTG* Storage Temperature -65 to 200 °°C TJ* Operating Junction Temperature -65 to 200 °°C PT* Power Dissipation TC = 25°°C Ambient TC = 100°°C Case 1.0 15 Watts Watts 3 Amp, 125V, NPN Silicon Power Transistors JAN, JTX, JTXV, JANS FEATURES: • Meets MIL-S-19500/393 • Collector-Base Voltage: up to 125 • Peak Collector Current: 5A • High Power Dissipation in TO-5: 15W @ TC = 100°°C • Fast Switching TO-5 APPLICATIONS: • Power Supply • Pulse Amplifier • High Frequency Power Switching 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 DESCRIPTION: DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200 °°C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life. * Indicates MIL-S-19500/393 |
同様の部品番号 - 2N3421 |
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同様の説明 - 2N3421 |
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