2N3740A datasheet(2/3 Pages) MICROSEMI

部品番号	2N3740A

部品情報	Medium Power PNP Transistors

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メーカー	MICROSEMI [Microsemi Corporation]

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MSC1040.PDF 03-12-99

2N3740A

ELECTRICAL CHARACTERISTICS:

(25

°°Case Temperature Unless Otherwise Noted)

VALUE

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Min.

Max.

Units

VCEO(sus)*

Collector-Emitter

Sustaining Voltage

IC = 100 mAdc, IB = 0 (Note 1)

60

----

Vdc

IEB0*

Emitter Base Cutoff

Current

VEB = 7.0 Vdc

----

100

nAdc

ICEX*

Collector Cutoff Current

VCE = 60 Vdc, VBE(off) = 1.5 Vdc

VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 150°°C

----

100

0.5

nAdc

mAdc

ICEO*

Collector-Emitter Cutoff

Current

VCE = 40 Vdc, IB = 0

----

1.0

µµAdc

ICBO*

Collector Base Cutoff

Current

VCB = 60 Vdc, IE = 0

----

100

nAdc

hFE*

DC Current Gain

(Note 1)

IC = 100 mAdc, VCE = 1.0 Vdc

IC = 250 mAdc, VCE = 1.0 Vdc

IC = 500 mAdc, VCE = 1.0 Vdc

IC = 1.0 Adc, VCE = 1.0 Vdc

40

30

20

10

----

100

----

VCE(sat)*

Collector-Emitter

Saturation Voltage

(Note 1)

IC = 1.0 Adc, IB = 125 mAdc

----

0.6

Vdc

VBE*

Base-Emitter Voltage

(Note 1)

IC = 250 mAdc, VCE = 1.0 Vdc

----

1.0

Vdc

fT*

Current Gain Bandwidth

Product

IC = 100 mAdc, VCE = 10 Vdc, f = 1.0 MHz

3.0

----

MHz

hfe*

Small-Signal Current

Gain

IC = 50 mAdc, VCE = 10 Vdc, f = 1.0 kHz

25

----

Cob*

Common Base Output

Capacitance

VCB = 10 Vdc, IC = 0, f = 100 kHz

----

100

pF

Note 1: Pulse Test: PW

≤≤ 300µµs, Duty Cycle ≤≤ 2.0%

* Indicates JEDEC registered data.

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