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2SC3649T-TD-E データシート(PDF) 2 Page - ON Semiconductor

部品番号 2SC3649T-TD-E
部品情報  Bipolar Transistor
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2SC3649T-TD-E データシート(HTML) 2 Page - ON Semiconductor

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2SA1419 / 2SC3649
No.2007-2/7
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=(--)120V, IE=0A
(--)1
μA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)1
μA
DC Current Gain
hFE1VCE=(--)5V, IC=(--)100mA
100*
400*
hFE2VCE=(--)5V, IC=(--)10mA
80
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)50mA
120
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(22)14
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)500mA, IB=(--)50mA
(--200)130
(--500)450
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=(--)500mA, IB=(--)50mA
(--)0.85
(--)1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)10μA, IE=0A
(--)180
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞
(--)160
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)10μA, IC=0A
(--)6
V
Turn-ON Time
ton
See specified Test Circuit.
(40)40
ns
Storage Time
tstg
(0.7)1.2
μs
Fall Time
tf
(40)80
ns
* : The 2SA1419 / 2SC3649 are classified by 100mA hFE as follows :
Rank
R
S
T
hFE
100 to 200
140 to 280
200 to 400
Switching Time Test Circuit
Ordering Information
Device
Package
Shipping
memo
2SA1419S-TD-E
PCP
1,000pcs./reel
Pb Free
2SA1419S-TD-H
PCP
1,000pcs./reel
Pb Free and Halogen Free
2SA1419T-TD-E
PCP
1,000pcs./reel
Pb Free
2SA1419T-TD-H
PCP
1,000pcs./reel
Pb Free and Halogen Free
2SC3649S-TD-E
PCP
1,000pcs./reel
Pb Free
2SC3649S-TD-H
PCP
1,000pcs./reel
Pb Free and Halogen Free
2SC3649T-TD-E
PCP
1,000pcs./reel
Pb Free
2SC3649T-TD-H
PCP
1,000pcs./reel
Pb Free and Halogen Free
INPUT
100V
50Ω
RL
100μF
470μF
--5V
IC=10IB1=--10IB2=0.7A
(For PNP, the polarity is reversed)
+
+
VR
PW=20μs
D.C.≤1%
RB
IB1
IB2


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