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FDS4953 データシート(PDF) 11 Page - Microsemi Corporation

部品番号 FDS4953
部品情報  EVALUATION KIT
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メーカー  MICROSEMI [Microsemi Corporation]
ホームページ  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

FDS4953 データシート(HTML) 11 Page - Microsemi Corporation

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LXE1710 EVALUATION BOARD
USER GUIDE
Microsemi
Linfinity Microelectronics Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 11
Copyright
© 2000
Rev. 1.1, 2000-12-01
MOSFET SELECTION
As seen in previous sections, the user can design the
output filter of the amplifier to meet performance or
costs targets. In addition, the amplifier’s power stage
(selection of MOSFETs) can be selected depending on
these tradeoffs. The efficiency of the amplifier circuit
can be approximated by the following equation.
CROSS
L
IND
PDS
NDS
L
IN
OUT
P
R
R
R
R
I
R
I
P
P
+
+
+
+
=
=
]
)
(
2
[

2
2
Where
RL
=
DC Resistance of Speaker
RNDS
=
n-channel MOSFET on-resistance
RPDS
=
p-channel MOSFET on-resistance
RIND
=
DC Resistance of Inductor
PCROSS =
MOSFET Switching Loss
The overall efficiency is a function of primarily the
MOSFETs and output filter inductors. The “Inductor”
section’s contribution will be considered later.
The
MOSFET Power loss is a function of the on-resistance
and gate charge.
 
A
R
P
I
W
P
R
R
I
P
O
PDS
NDS
DS
5
.
2
4
25
Then
4
at
25
If
)]
(
2
[
Loss
Power
MOSFET
2
=
=
=
=
+
=
=
The LX1710 Evaluation Board is designed using
FDS4953
p-channel
and
FDS6612A
n-channel
MOSFETS.
W
P
R
R
DS
PDS
NDS
56
.
1
)]
095
.
0
03
.
0
(
2
[
)
5
.
2
(
095
.
0
,
03
.
0
2
=
+
=
=
=
MOSFET power loss is proportional to on-resistance.
   
n
f
CV
P
S
CROSS
2
Loss
Switching
MOSFET
=
=
Where
C
= Input Capacitance
V
= Supply Voltage
fS
= Switching Frequency
n
= Number of MOSFETS
Assume
C
= 1000pF
V
= 15VDC
fS
= 500kHz
W
PCROSS
45
.
0
)
4
)(
10
500
)(
15
)(
10
1
(
3
2
9
=
×
×
=
MOSFET switching loss is proportional to total gate
charge, supply voltage, and switching frequency.
There are a few other important parameters to
consider when selecting the output power components
besides the on-resistance and gate charge of the
MOSFETs.
The drain-source voltage must provide
ample margin for circuit noise and high speed
switching transients. Since the amplifier configuration
requires output bridge operation at the supply voltage,
the MOSFETs should have a drain-source voltage of
at least 50% greater than the supply voltage.
The
power dissipation of the MOSFETs should also be
able to dissipate the heat generated by the internal
losses and be greater than the sum of PDS and PCROSS.
Linfinity recommends that in selecting MOSFETs, RDS
0 1!1  2g <10nC. The table below provides
several MOSFET options
.
FDS6612A
FDS4953
Si4532ADY
IRF7105
n-channel p-channel n-channel p-channel n-channel p-channel
Drain-Source On-Resistance
RDS(ON)@VGS = +/-10V

0.022
0.053
0.053
0.08
0.10
0.25
Drain-Source Voltage
VDSS (V)
30
-30
30
-30
25
-25
Drain Current (continuous)
ID(continuous) (A)
8.4
-5
4.9
-3.9
3.5
-2.3
Total Gate Charge
Qg (typical) (nC)
9
8
8
10
9.4
10
Manufacturer
Fairchild
Fairchild
Vishay
Siliconix
Vishay
Siliconix
International
Rectifier
International
Rectifier
  MOSFET Component Options


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