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MSAER38N10A データシート(PDF) 1 Page - Microsemi Corporation |
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MSAER38N10A データシート(HTML) 1 Page - Microsemi Corporation |
1 / 2 page MSAER38N10A MSAFR38N10A 100 Volts 38 Amps 55 m Ω Ω Features • Ultrafast rectifier in parallel with the body diode (MSAE type only) • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Reverse polarity available upon request DESCRIPTION SYMBOL MAX. UNIT Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C BVDSS 100 Volts Drain-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ BVDGR 100 Volts Continuous Gate-to-Source Voltage VGS +/-20 Volts Transient Gate-to-Source Voltage VGSM +/-30 Volts Continuous Drain Current Tj= 25 °C Tj= 100 °C ID25 ID100 38 24 Amps Peak Drain Current, pulse width limited by TJmax IDM 150 Amps Repetitive Avalanche Current IAR 38 Amps Repetitive Avalanche Energy EAR 15 mJ Single Pulse Avalanche Energy EAS 150 mJ Voltage Rate of Change of the Recovery Diode @ IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C dv/dt 5.5 V/ns Power Dissipation PD 300 Watts Junction Temperature Range Tj -55 to +150 °C Storage Temperature Range Tstg -55 to +150 °C Continuous Source Current (Body Diode) IS 38 Amps Pulse Source Current (Body Diode) ISM 150 Amps Thermal Resistance, Junction to Case θ JC 0.4 °C/W Maximum Ratings @ 25 °°C (unless otherwise specified) Mechanical Outline Datasheet# MSC0257B 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 N-CHANNEL ENHANCEMENT MODE POWER MOSFET DRAIN SOURCE GATE |
同様の部品番号 - MSAER38N10A |
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同様の説明 - MSAER38N10A |
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