データシートサーチシステム |
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MSAFX24N50A データシート(PDF) 2 Page - Microsemi Corporation |
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MSAFX24N50A データシート(HTML) 2 Page - Microsemi Corporation |
2 / 2 page DESCRIPTION SYMBOL CONDITIONS MIN TYP. MAX UNIT Drain-to-Source Breakdown Voltage (Gate Shorted to Source) BVDSS VGS = 0 V, ID = 250 µA 500 V Temperature Coefficient of the Drain-to-Source Breakdown Voltage ∆BV DSS/ ∆T J 5.4 V/ °C Gate Threshold Voltage VGS(th) VDS = VGS, ID = 4 mA 2.0 4.0 V Gate-to-Source Leakage Current IGSS VGS = ± 20V DC, VDS = 0 T J = 25 °C T J = 125 °C ±100 ±200 nA Drain-to-Source Leakage Current (Zero Gate Voltage Drain Current) IDSS VDS =0.8 •BV DSS TJ = 25 °C VGS = 0 V T J = 125 °C 200 1000 µA Static Drain-to-Source On-State Resistance (1) RDS(on) VGS= 10V, ID= 12A T J = 25 °C I D= 24A T J = 25 °C I D= 12A T J = 125 °C 0.45 0.23 0.27 Ω Forward Transconductance (1) gfs VDS ≥ 10 V; I D = 24 A 15 21 S Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VGS = 0 V, VDS = 25 V, f = 1 MHz 4200 450 135 pF Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) tr td(off) tf VGS = 10 V, V DS = 250 V, ID = 12 A, R G = 2.00 Ω 16 33 65 30 25 45 80 40 ns Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Qg(on) Qgs Qgd VGS = 10 V, V DS = 250V, I D = 12A 135 30 65 160 40 85 nC Body Diode Forward Voltage (1) VSD IF = IS, VGS = 0 V 1.5 V Reverse Recovery Time (Body Diode) trr IF = 10 A, 25 C -di/dt = 100 A/ µs, 125 C 250 400 ns Reverse Recovery Charge Qrr IF = 10 A, 25 C di/dt = 100 A/ µs, 125 C 1.0 2.0 µC Electrical Parameters @ 25 °°C (unless otherwise specified) Notes (1) Pulse test, t ≤≤ 300 µµs, duty cycle δδ ≤≤ 2% (2) Microsemi Corp. does not manufacture the mosfet die; contact company for details. MSAFX24N50A |
同様の部品番号 - MSAFX24N50A |
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同様の説明 - MSAFX24N50A |
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