DESCRIPTION

SYMBOL

CONDITIONS

MIN

TYP.

MAX

UNIT

Drain-to-Source Breakdown Voltage

(Gate Shorted to Source)

µA

500

V

Temperature Coefficient of the Drain-to-Source

Breakdown Voltage

∆BV

∆T

J

5.4

V/

°C

Gate Threshold Voltage

2.0

4.0

V

Gate-to-Source Leakage Current

± 20V

°C

°C

±100

±200

nA

Drain-to-Source Leakage Current (Zero Gate

Voltage Drain Current)

•BV

DSS

°C

°C

200

1000

µA

Static Drain-to-Source On-State Resistance (1)

°C

°C

°C

0.45

0.23

0.27

Ω

Forward Transconductance (1)

≥ 10 V; I

15

21

S

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

4200

450

135

pF

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Ω

16

33

65

30

25

45

80

40

ns

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (Miller) Charge

135

30

65

160

40

85

nC

Body Diode Forward Voltage (1)

1.5

V

Reverse Recovery Time (Body Diode)

25 C

-di/dt = 100 A/

µs,

125 C

250

400

ns

Reverse Recovery Charge

25 C

di/dt = 100 A/

µs,

125 C

1.0

2.0

µC

Electrical Parameters @ 25

°°C (unless otherwise specified)

Notes

(1)

Pulse test, t

≤≤ 300 µµs, duty cycle δδ ≤≤ 2%

(2)

Microsemi Corp. does not manufacture the mosfet die; contact company for details.

MSAFX24N50A