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MSAHX60F60A データシート(PDF) 2 Page - Microsemi Corporation |
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MSAHX60F60A データシート(HTML) 2 Page - Microsemi Corporation |
2 / 2 page DESCRIPTION SYMBOL CONDITIONS MIN TYP. MAX UNIT Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) BVCES VGS = 0 V, IC = 250 µA 600 V Gate Threshold Voltage VGE(th) VCE = VGE, IC = 250 µA 2.5 5.0 V Gate-to-Emitter Leakage Current IGES VGE = ± 20V DC, VCE = 0 TJ = 25 °C T J = 125 °C ±100 ±200 nA Collector-to-Emitter Leakage Current (Zero Gate Voltage Collector Current) ICES VCE =0.8 •BV CES TJ = 25 °C VGE = 0 V T J = 125 °C 200 1000 µA Collector-to-Emitter Saturation Voltage (1) VCE(sat) VGE= 15V, IC= 30A T J = 25 °C IC= 60A T J = 25 °C IC= 30A T J = 125 °C 2.2 3.5 2.2 2.9 V Forward Transconductance (1) gfs VCE ≥ 10 V; I C = 30 A 15 20 S Input Capacitance Output Capacitance Reverse Transfer Capacitance Cies Coes Cres VGE = 0 V, VCE = 25 V, f = 1 MHz 2500 230 70 pF INDUCTIVE LOAD, Tj= 25 °°C Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Off Energy td(on) tri td(off) tfi Eoff VGE = 15 V, VCE = 480 V, IC = 30 A, RG = 4.7 Ω, L= 100 µH note 2, 3 25 30 175 125 1.3 175 ns ns ns ns mJ INDUCTIVE LOAD, Tj= 125 °°C Turn-on Delay Time Rise Time On Energy Turn-off Delay Time Fall Time Off Energy td(on) tri Eon td(off) tfi Eoff VGE = 15 V, VCE = 480 V, IC = 30 A, RG = 4.7 Ω, L= 100 µH note 2, 3 25 35 1 250 260 4 ns ns mJ ns ns mJ Total Gate Charge Gate-to-Emitter Charge Gate-to-Collector (Miller) Charge Qg Qge Qgc VGE = 15 V, VCE = 300V, IC = 30A 125 23 50 150 35 75 nC Antiparallel diode forward voltage (MSAHX60F60A only) VF IE= 15 A T J = 25 °C IE= 15 A T J = 150 °C IE= 30 A T J = 25 °C IE= 50 A T J = 25 °C 1.7 1.9 1.5 1.3 V V V V Antiparallel diode reverse recovery time (MSAHX60F60A only) trr IE= 10 A, dIE/dt= 100 A/us, T J= 25 °C IE= 30 A, dIE/dt= 100 A/us, T J= 25 °C 140 100 ns ns Antiparallel diode reverse recovery charge (MSAHX60F60A only) Qrr IE= 10 A, dIE/dt= 100 A/us, T J= 25 °C IE= 30 A, dIE/dt= 100 A/us, T J= 25 °C 160 320 nC nC Antiparallel diode peak recovery current (MSAHX60F60A only) IRM IE= 10 A, dIE/dt= 100 A/us, T J= 25 °C IE= 30 A, dIE/dt= 100 A/us, T J= 25 °C 3 4.2 A A Electrical Parameters @ 25 °°C (unless otherwise specified) Notes (1) Pulse test, t ≤≤ 300 µµs, duty cycle δδ ≤≤ 2% (2) switching times and losses may increase for larger V CE and/or RG values or higher junction temperatures. (3) switching losses include “tail” losses (4) Microsemi Corp. does not manufacture the igbt die; contact company for details. MSAGX60F60A MSAHX60F60A |
同様の部品番号 - MSAHX60F60A |
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同様の説明 - MSAHX60F60A |
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