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2SD1620 データシート(PDF) 2 Page - ON Semiconductor

部品番号 2SD1620
部品情報  Bipolar Transistor
Download  6 Pages
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2SD1620 データシート(HTML) 2 Page - ON Semiconductor

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2SD1620
No.1719-2/6
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
Collector Dissipation
PC
500
mW
When mounted on ceramic substrate (250mm2×0.8mm)
1.3
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=20V, IE=0A
100
nA
Emitter Cutoff Current
IEBO
VEB=4V, IC=0A
100
nA
DC Current Gain
hFE
VCE=2V, IC=3A
140
210
Gain-Bandwidth Product
fT
VCE=10V, IC=50mA
200
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
30
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=3A, IB=60mA
0.3
0.4
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10μA, IE=0A
30
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEX
IC=1mA, VBE=3V
20
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
10
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10μA, IC=0A
6
V
Ordering Information
Device
Package
Shipping
memo
2SD1620-TD-E
PCP
1,000pcs./reel
Pb Free
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
5
4
3
2
1
0
0123
5
46
ITR09988
1mA
5mA
2mA
10mA
15mA
25mA
5
4
3
2
1
0
0
0.2
0.4
0.6
1.0
0.8
1.2
ITR09987
IB=0mA
2mA
5mA
10mA
15mA
25mA
40mA
60mA
IB=0mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.


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