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CS5151H データシート(PDF) 11 Page - ON Semiconductor |
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CS5151H データシート(HTML) 11 Page - ON Semiconductor |
11 / 16 page CS5151H http://onsemi.com 11 This circuit operates by pulling the Soft Start pin high, and the VFFB pin low, emulating a short circuit condition. Figure 14. Implementing Shutdown with the CS5151H Shutdown Input 5.0 V MMUN2111T1 (SOT−23) 5 8 V FFB SS IN4148 CS5151H External Power Good Circuit An optional Power Good signal can be generated through the use of four additional external components (see Figure 15). The threshold voltage of the Power Good signal can be adjusted per the following equation: VPower Good + (R1 ) R2) 0.65 V R2 This circuit provides an open collector output that drives the Power Good output to ground for regulator voltages less than VPower Good. Figure 15. Implementing Power Good with the CS5151H 5.0 V Power Good 10 k VOUT PN3904 6.2 k R1 R2 PN3904 10 k R3 CS5151H Figure 16. CS5151H Demonstration Board During Power Up. Power Good Signal is Activated when Output Voltage Reaches 1.70 V. M 2.50 ms Trace 4− 5.0 V Input (2.0 V/div.) Trace 3 − 12 V Input (VCC1) and (VCC2) (10 V/div.) Trace 1− Regulator Output Voltage (1.0 V/div.) Trace 2− Power Good Signal (2.0 V/div.) Selecting External Components The CS5151H can be used with a wide range of external power components to optimize the cost and performance of a particular design. The following information can be used as general guidelines to assist in their selection. NFET Power Transistors Both logic level and standard MOSFETs can be used. The reference designs derive gate drive from the 12 V supply which is generally available in most computer systems and use logic level MOSFETs. A charge pump may be easily implemented to permit use of standard MOSFETs or support 5.0 V or 12 V only systems (maximum of 20 V). Multiple MOSFETs may be paralleled to reduce losses and improve efficiency and thermal management. Voltage applied to the MOSFET gates depends on the application circuit used. The gate driver output is specified to drive to within 1.5 V of ground when in the low state and to within 2.0 V of its bias supply when in the high state. In practice, the MOSFET gate will be driven rail to rail due to overshoot caused by the capacitive load it presents to the controller IC. For the typical application where VCC1 = VCC2 = 12 V and 5.0 V is used as the source for the regulator output current, the following gate drive is provided; VGATE + 12 V * 5.0 V + 7.0 V (see Figure 17.) |
同様の部品番号 - CS5151H |
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同様の説明 - CS5151H |
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