BC856BM3T5G datasheet(2/4 Pages) ONSEMI

部品番号	BC856BM3T5G

部品情報	General Purpose Transistor

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BC856BM3, NSVBC856BM3

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = −10 mA)

V(BR)CEO

−65

−

V

Collector−Emitter Breakdown Voltage

(IC = −10 mA, VEB = 0)

V(BR)CES

−80

−

V

Collector−Base Breakdown Voltage

(IC = −10 mA)

V(BR)CBO

−80

−

V

Emitter−Base Breakdown Voltage

(IE = −1.0 mA)

V(BR)EBO

−5.0

−

V

Collector Cutoff Current (VCB = −30 V)

(VCB = −30 V, TA = 150°C)

ICBO

−

−15

−4.0

nA

mA

ON CHARACTERISTICS

DC Current Gain

(IC = −10 mA, VCE = −5.0 V)

(IC = −2.0 mA, VCE = −5.0 V)

hFE

−

220

150

290

−

475

−

Collector−Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA)

Collector−Emitter Saturation Voltage (IC = −100 mA, IB = −5.0 mA)

VCE(sat)

−

−0.3

−0.65

V

Base −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA)

Base −Emitter Saturation Voltage (IC = −100 mA, IB = −5.0 mA)

VBE(sat)

−

−0.7

−0.9

−

V

Base −Emitter Voltage (IC = −2.0 mA, VCE = −5.0 V)

Base −Emitter Voltage (IC = −10 mA, VCE = −5.0 V)

VBE(on)

−0.6

−

−0.75

−0.82

mV

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)

fT

100

−

MHz

Output Capacitance

(VCB = −10 V, f = 1.0 MHz)

Cobo

−

4.5

pF

Noise Figure

(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)

NF

−

10

dB

同様の部品番号 - BC856BM3T5G

メーカー	部品番号	データシート	部品情報
ON Semiconductor	BC856BM3T5G	61Kb / 4P	General Purpose Transistor PNP Silicon March, 2006 ??Rev. 1

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