2N3904 datasheet(2/3 Pages) AUK

部品番号	2N3904

部品情報	NPN Silicon Transistor (General small signal application)

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メーカー	AUK [AUK corp]

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KST-9010-000

2

2N3904

Absolute maximum ratings

Ta=25

°°°°C

Characteristic

Symbol

Ratings

Unit

Collector-Base voltage

VCBO

60

V

Collector-Emitter voltage

VCEO

40

V

Emitter-base voltage

VEBO

6V

Collector current

IC

200

mA

Collector dissipation

PC

625

mW

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

-55~150

°C

Electrical Characteristics

Ta=25

°°°°C

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Collector-Base breakdown voltage

BV

CBO

I

C=10µA, IE=0

60

-

V

Collector-Emitter breakdown voltage

BV

CEO

I

C=1mA, IB=0

40

-

V

Emitter-Base breakdown voltage

BV

EBO

I

E=10µA, IC=0

6

-

V

Collector cut-off current

I

CEX

V

CE=30V, VEB=3V

-

50

nA

DC current gain

h

FE

V

CE=1V, IC=10mA

100

-

300

-

Collector-Emitter saturation voltage

V

CE(sat)

I

C=50mA, IB=5mA

-

0.3

V

Transition frequency

f

T

V

CE=20V, IC=10mA,

f=100MHz

300

-

MHz

Collector output capacitance

C

ob

V

CB=5V, IE=0, f=1MHz

-

4

pF

Delay time

t

d

--

35

ns

Rise time

t

r

V

CC=3Vdc, VBE(off)=0.5Vdc.

I

C=10mAdc, IB1=1mAdc

--

35

ns

Storage time

t

s

-

200

ns

Fall Time

t

f

V

CC=3Vdc,IC=10mAdc,

I

B1=IB2=1mAdc

--

50

ns

同様の部品番号 - 2N3904

メーカー	部品番号	データシート	部品情報
ON Semiconductor	2N3904	98Kb / 8P	General Purpose Transistors(NPN Silicon) November, 2000 ??Rev. 3
KODENSHI_AUK CORP.	2N3904	179Kb / 4P	NPN Silicon Transistor
Diotec Semiconductor	2N3904	98Kb / 2P	Si-Epitaxial PlanarTransistors
Central Semiconductor C...	2N3904	323Kb / 2P	NPN SILICON TRANSISTOR
Daya Electric Group Co....	2N3904	188Kb / 2P	TO-92 Plastic-Encapsulate Transistors

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