STA353 datasheet(2/4 Pages) AUK

部品番号	STA353

部品情報	PNP Silicon Transistor

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メーカー	AUK [AUK corp]

ホームページ	https:www.auk.co.kr

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2 / 4 page

KST-B002-000

2

STA353

Absolute maximum ratings

(Ta=25

°C)

Characteristic

Symbol

Rating

Unit

Collector-Base voltage

VCBO

-40

V

Collector-Emitter voltage

VCEO

-30

V

Emitter-Base voltage

VEBO

-5

V

Collector current

IC

-2

A

Emitter Current

IE

2

A

PC ( Tc=25℃)

10

Collector Power dissipation

PC ( Ta=25℃)

1.2

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

-55~150

°C

Electrical Characteristics

(Ta=25

°C)

Characteristic

Symbol

Test Condition

Min. Typ. Max.

Unit

Collector-Base breakdown voltage

BVCBO

IC=-100µA, IE=0

-40

-

V

Collector-Emitter breakdown voltage

BVCEO

IC=-10mA, IB=0

-30

-

V

Emitter-Base breakdown voltage

BVEBO

IE=-1mA, IC=0

-5

-

V

Collector cut-off current

ICBO

VCB=-40V, IE=0

-

-0.1

µA

Emitter cut-off current

IEBO

VEB=-5V, IC=0

-

-0.1

µA

DC current gain

hFE*

VCE=-2V, IC=-500mA

100

-

320

-

Base-Emitter on voltage

VBE(ON)

VCE=-2V, IC=-500mA

-

-1

V

VCE(sat)1

IC=-2A, IB=-0.2A

-

-0.8

Collector-Emitter saturation voltage

VCE(sat)2

IC=-1.5A, IB=-0.03A

-

-2

V

Transition frequency

fT

VCE=-5V, IC=-500mA

-

120

-

MHz

Collector output capacitance

Cob

VCB=-10V, IE=0, f=1MHz

-

48

-

pF

* : hFE rank / O : 100~200, Y : 160~320

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