データシートサーチシステム |
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BU406 データシート(PDF) 1 Page - Fairchild Semiconductor |
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BU406 データシート(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page © 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com BU406 Rev. 1.2.1 1 September 2013 BU406 NPN Epitaxial Silicon Transistor Features • High-Voltage Capability • High Switching Speed • Low Saturation Voltage Applications • Horizontal deflection for TV and CRT Ordering Information Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Part Number Marking Package Packing Method BU406 BU406 TO-220 3L Rail BU406TU BU406 Symbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 7 A ICP Collector Current (Pulse) 10 A IB Base Current 4 A PC Collector Dissipation 60 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 to 150 °C Description The BU406 is a 400 V 7 A Silicon Epitaxial Planar NPN Transistor. The BU406 is designed for high speed switching applications which utilizes the indus- try standard TO-220 package offering flexibility in design and excellent Power Dissipation. 1.Base 2.Collector 3.Emitter 1 TO-220 |
同様の部品番号 - BU406 |
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同様の説明 - BU406 |
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