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FCD600N60Z データシート(PDF) 4 Page - Fairchild Semiconductor |
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FCD600N60Z データシート(HTML) 4 Page - Fairchild Semiconductor |
4 / 9 page ©2012 Fairchild Semiconductor Corporation FCD600N60Z Rev. C3 www.fairchildsemi.com 4 Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 11. Eoss vs. Drain to Source Voltage -100 -50 0 50 100 150 200 0.85 0.90 0.95 1.00 1.05 1.10 1.15 *Notes: 1. VGS = 0V 2. ID = 250μA TJ, Junction Temperature [ oC] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *Notes: 1. VGS = 10V 2. ID = 3.7A TJ, Junction Temperature [ oC] 0.1 1 10 100 1000 0.1 1 10 50 10μs 100μs 1ms 10ms VDS, Drain-Source Voltage [V] Operation in This Area is Limited by R DS(on) *Notes: 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse DC 25 50 75 100 125 150 0 2 4 6 8 TC, Case Temperature [ oC] VDS, Drain to Source Voltage [V] 0 100 200 300 400 500 600 0 1 2 3 4 V DS, Drain to Source Voltage [V] |
同様の部品番号 - FCD600N60Z |
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同様の説明 - FCD600N60Z |
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