FDD8N50NZ datasheet(2/8 Pages) FAIRCHILD

部品番号	FDD8N50NZ

部品情報	Uninterruptible Power Supply

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メーカー	FAIRCHILD [Fairchild Semiconductor]

ホームページ	http://www.fairchildsemi.com

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FDD8N50NZ Rev. C1

www.fairchildsemi.com

2

Package Marking and Ordering Information

Electrical Characteristics T

C = 25

oC unless otherwise noted.

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Part Number

Top Mark

Package

Packing Method

Reel Size

Tape Width

Quantity

FDD8N50NZTM

FDD8N50NZ

DPAK

Tape and Reel

330 mm

16 mm

2500 units

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain to Source Breakdown Voltage

ID = 250 μA, VGS = 0 V, TC = 25oC

500

-

V

ΔBVDSS

/

ΔTJ

Breakdown Voltage Temperature

Coefficient

ID = 250 μA, Referenced to 25oC-

0.5

-

V/oC

IDSS

Zero Gate Voltage Drain Current

VDS = 500 V, VGS = 0 V

-

1

μA

VDS = 400 V, TC = 125oC-

-

10

IGSS

Gate to Body Leakage Current

VGS = ±25 V, VDS = 0 V

-

±10

μA

VGS(th)

Gate Threshold Voltage

VGS = VDS, ID = 250 μA3.0

-

5.0

V

RDS(on)

Static Drain to Source On Resistance

VGS = 10 V, ID = 3.25 A

-

0.77

0.85

Ω

gFS

Forward Transconductance

VDS = 20 V, ID = 3.25 A

-

6.3

-

S

Ciss

Input Capacitance

VDS = 25 V, VGS = 0 V,

f = 1 MHz

-

565

735

pF

Coss

Output Capacitance

-

80

105

pF

Crss

Reverse Transfer Capacitance

-

5

8

pF

Qg(tot)

Total Gate Charge at 10V

VDS = 400 V, ID = 6.5 A,

VGS = 10 V

(Note 4)

-14

18

nC

Qgs

Gate to Source Gate Charge

-

4

-

nC

Qgd

Gate to Drain “Miller” Charge

-

6

-

nC

td(on)

Turn-On Delay Time

VDD = 250 V, ID = 6.5 A,

RG = 25 Ω, VGS = 10 V

(Note 4)

-17

45

ns

tr

Turn-On Rise Time

-

34

80

ns

td(off)

Turn-Off Delay Time

-

43

95

ns

tf

Turn-Off Fall Time

-

27

60

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

8

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

30

A

VSD

Drain to Source Diode Forward Voltage

VGS = 0 V, ISD = 6.5 A

-

1.4

V

trr

Reverse Recovery Time

VGS = 0 V, ISD = 6.5 A,

dIF/dt = 100 A/μs

-

228

-

ns

Qrr

Reverse Recovery Charge

-

1.43

-

μC

Notes:

1. Repetitive rating: pulse-width limited by maximum junction temperature.

2. L = 13.6 mH, IAS = 6.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.

3. ISD ≤ 6.5 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.

4. Essentially Independent of Operating Temperature Typical Characteristics

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