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BC856BW データシート(PDF) 3 Page - Infineon Technologies AG |
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BC856BW データシート(HTML) 3 Page - Infineon Technologies AG |
3 / 8 page BC856W...BC860W 3 Dec-11-2001 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 BC856W BC857/860W BC858/859W V(BR)CES 80 50 30 - - - - - - V Emitter-base breakdown voltage IE = 1 µA, IC = 0 V(BR)EBO 5 - - Collector cutoff current VCB = 30 V, IE = 0 ICBO - - 15 nA Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C ICBO - - 5 µA DC current gain 1) IC = 10 µA, VCE = 5 V hFE-group A hFE-group B hFE-group C hFE - - - 140 250 480 - - - - DC current gain 1) IC = 2 mA, VCE = 5 V hFE-group A hFE-group B hFE-group C hFE 125 220 420 180 290 520 250 475 800 Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VCEsat - - 75 250 300 650 mV Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VBEsat - - 700 850 - - Base-emitter voltage 1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V VBE(ON) 600 - 650 - 750 820 1) Pulse test: t ≤=300µs, D = 2% |
同様の部品番号 - BC856BW |
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同様の説明 - BC856BW |
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